Renesas Electronics Corporation Memory 71T75802S133PFGI8

The 71T75802S133PFGI8 is a 2.5V synchronous SRAM memory device from Quarktwin Technology Ltd., featuring a configuration of 512K x 36 bits. It operates at a high speed of 133 MHz, with a clock-to-data access time of 4.2 ns. This memory device supports the Zero Bus Turnaround (ZBT,Ñ¢) feature, which eliminates dead cycles between read and write operations, enhancing overall system performance. The SRAM includes a burst counter for efficient data handling, allowing for four-word burst capability in either interleaved or linear order. It has a single read/write control pin and utilizes positive clock-edge triggering for address, data, and control signals, making it suitable for fully pipelined applications. The device is packaged in a 100-pin thin quad flatpack (TQFP) and is available in both commercial and industrial temperature ranges, with an operational temperature range of -40¬8C to +85¬8C for selected speeds. Additional features include individual byte write control, three chip enable pins for easy depth expansion, and a power-down mode controlled by the ZZ input. The device is compliant with the IEEE 1149.1 JTAG standard for boundary scan testing.