Renesas Electronics Corporation Memory 71T75602S150BGG

Description
SRAM - Synchronous, SDR (ZBT) Memory IC 18Mb (512K x 36) Parallel 150MHz 3.8ns 119-PBGA (14x22)
Request a Quote Datasheet
Description
SRAM - Synchronous, SDR (ZBT) Memory IC 18Mb (512K x 36) Parallel 150MHz 3.8ns 119-PBGA (14x22)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 71T75602S150BGG-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Synchronous, SDR (ZBT) Memory IC 18Mb (512K x 36) Parallel 150MHz 3.8ns 119-PBGA (14x22)

SRAM - Synchronous, SDR (ZBT) Memory IC 18Mb (512K x 36) Parallel 150MHz 3.8ns 119-PBGA (14x22)

Buy Now
Memory - 71T75602S150BGG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 18Mbit Parallel 150 MHz 3.8 ns 119-PBGA (14x22)

SRAM - Synchronous, SDR (ZBT) Memory IC 18Mbit Parallel 150 MHz 3.8 ns 119-PBGA (14x22)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71T75602S150BGG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71T75602S150BGG
Integrated Circuits (ICs) - Memory - Memory 71T75602S150BGG
IC SRAM 18MBIT PAR 119PBGA

IC SRAM 18MBIT PAR 119PBGA

Supplier's Site
IC SRAM 18MBIT PARALLEL 119PBGA

IC SRAM 18MBIT PARALLEL 119PBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 71T75602S150BGG-ND 71T75602S150BGG 71T75602S150BGG 71T75602S150BGG
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 18000 kbits 18000 kbits 18000 kbits 18000 kbits
Package Type BGA; 119-BGA BGA; 119-BGA BGA
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS29LV016J - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 50 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 28C64AX-20B/XA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 200 ns
Density 64 kbits
View Details
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962R1821502VXF - 5962R1821502VXF - Infineon Technologies AG
Specs
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 144000 kbits
Number of Words 4 k
View Details