Renesas Electronics Corporation Memory 71256S25DB

Description
SRAM - Asynchronous Memory IC 256Kb (32K x 8) Parallel 25ns 28-CDIP
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Description
SRAM - Asynchronous Memory IC 256Kb (32K x 8) Parallel 25ns 28-CDIP
Request a Quote
Datasheet
Datasheet Summary
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The 71256S25DB is a high-speed static RAM memory device from Quarktwin Technology Ltd., featuring a capacity of 256K bits organized as 32K x 8 bits. It offers a maximum access time of 25 ns, making it suitable for applications requiring fast data retrieval. The device operates at a supply voltage of 5V ¬± 10% and has a typical power consumption of 350 mW during active operation, with a low-power standby mode that significantly reduces power usage when not in active use. This memory chip is available in a 28-pin ceramic dual in-line package (CDIP), which allows for efficient board-level packing. It is compliant with military specifications (MIL-STD-883, Class B), ensuring high reliability and performance in demanding environments. The device also supports battery backup operation with a data retention capability at 2V, consuming only 5OºW, making it suitable for applications where power efficiency is critical. The 71256S25DB is ideal for commercial and industrial applications, with an operational temperature range of 0¬8C to 70¬8C. Its TTL-compatible input and output make it easy to integrate into existing systems. Overall, this product is a robust choice for engineers looking for reliable and efficient memory solutions in their designs.

Datasheet Summary
Powered by GS/AI

The 71256S25DB is a high-speed static RAM memory device from Quarktwin Technology Ltd., featuring a capacity of 256K bits organized as 32K x 8 bits. It offers a maximum access time of 25 ns, making it suitable for applications requiring fast data retrieval. The device operates at a supply voltage of 5V ¬± 10% and has a typical power consumption of 350 mW during active operation, with a low-power standby mode that significantly reduces power usage when not in active use. This memory chip is available in a 28-pin ceramic dual in-line package (CDIP), which allows for efficient board-level packing. It is compliant with military specifications (MIL-STD-883, Class B), ensuring high reliability and performance in demanding environments. The device also supports battery backup operation with a data retention capability at 2V, consuming only 5OºW, making it suitable for applications where power efficiency is critical. The 71256S25DB is ideal for commercial and industrial applications, with an operational temperature range of 0¬8C to 70¬8C. Its TTL-compatible input and output make it easy to integrate into existing systems. Overall, this product is a robust choice for engineers looking for reliable and efficient memory solutions in their designs.

Suppliers

Company
Product
Description
Supplier Links
Memory - 71256S25DB-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 256Kb (32K x 8) Parallel 25ns 28-CDIP

SRAM - Asynchronous Memory IC 256Kb (32K x 8) Parallel 25ns 28-CDIP

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IC SRAM 256KBIT PAR 28CERDIP

IC SRAM 256KBIT PAR 28CERDIP

Supplier's Site Datasheet
Memory - 71256S25DB - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 256Kbit Parallel 25 ns 28-CDIP

SRAM - Asynchronous Memory IC 256Kbit Parallel 25 ns 28-CDIP

Buy Now Datasheet

Technical Specifications

  DigiKey Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71256S25DB-ND 71256S25DB 71256S25DB
Product Name Memory Memory Memory
Memory Category SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F) -55 to 125 C (-67 to 257 F)
Package Type "28-CDIP (0.600"", 15.24mm)" DIP; 28-CDIP (0.600\", 15.24mm)
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