Renesas Electronics Corporation Memory 71256S100TDB

Description
IC SRAM 256KBIT PARALLEL 28CDIP
Datasheet
Description
IC SRAM 256KBIT PARALLEL 28CDIP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC SRAM 256KBIT PARALLEL 28CDIP

IC SRAM 256KBIT PARALLEL 28CDIP

Supplier's Site Datasheet
Memory - 71256S100TDB - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 256Kbit Parallel 100 ns 28-CDIP

SRAM - Asynchronous Memory IC 256Kbit Parallel 100 ns 28-CDIP

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number 71256S100TDB 71256S100TDB
Product Name Memory Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip
Access Time 100 ns 100 ns
Density 256 kbits 256 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory IC and Storage Component - 774-CY62126DV30LL-55ZXIT - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category Volatile; SRAM Chip
Access Time 55 ns
Cycle Time 55 ns
View Details
Memory - AS5C4009 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 55 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
SDRAM - 2420773P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 64000 k
View Details
Memory - 5962-8996701MXA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 60 ns
Density 64 kbits
View Details