Renesas Electronics Corporation Memory 71256L35TDB

Description
SRAM - Asynchronous Memory IC 256Kbit Parallel 35 ns 28-CDIP
Datasheet
Description
SRAM - Asynchronous Memory IC 256Kbit Parallel 35 ns 28-CDIP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 71256L35TDB - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 256Kbit Parallel 35 ns 28-CDIP

SRAM - Asynchronous Memory IC 256Kbit Parallel 35 ns 28-CDIP

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71256L35TDB
Integrated Circuits (ICs) - Memory - Memory 71256L35TDB
IC SRAM 256KBIT PARALLEL 28CDIP

IC SRAM 256KBIT PARALLEL 28CDIP

Supplier's Site
IC SRAM 256KBIT PARALLEL 28CDIP

IC SRAM 256KBIT PARALLEL 28CDIP

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71256L35TDB 71256L35TDB 71256L35TDB
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Access Time 35 ns 35 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 256 kbits 256 kbits 256 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory IC and Storage Component - 736-DP8429D-MSP - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type Bulk
View Details
3 suppliers
Memory - 24C16/P - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 3500 ns
Density 16 kbits
View Details
Memory - AS5C4009LL - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 4096 kbits
View Details
Memory - A2C00045230 A - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers