Renesas Electronics Corporation Memory 71124S20YG8

Description
SRAM - Asynchronous Memory IC 1Mb (128K x 8) Parallel 20ns 32-SOJ
Request a Quote Datasheet
Description
SRAM - Asynchronous Memory IC 1Mb (128K x 8) Parallel 20ns 32-SOJ
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 71124S20YG8-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 1Mb (128K x 8) Parallel 20ns 32-SOJ

SRAM - Asynchronous Memory IC 1Mb (128K x 8) Parallel 20ns 32-SOJ

Buy Now Datasheet
Memory - 71124S20YG8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 1Mbit Parallel 20 ns 32-SOJ

SRAM - Asynchronous Memory IC 1Mbit Parallel 20 ns 32-SOJ

Buy Now Datasheet
IC SRAM 1MBIT PARALLEL 32SOJ

IC SRAM 1MBIT PARALLEL 32SOJ

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71124S20YG8 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71124S20YG8
Integrated Circuits (ICs) - Memory - Memory 71124S20YG8
IC SRAM 1MBIT PARALLEL 32SOJ

IC SRAM 1MBIT PARALLEL 32SOJ

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 71124S20YG8-ND 71124S20YG8 71124S20YG8 71124S20YG8
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 1000 kbits 1000 kbits 1000 kbits 1000 kbits
Package Type "32-BSOJ (0.400"", 10.16mm Width)" 32-BSOJ (0.400\", 10.16mm Width)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - CY62128BNLL-55SXI-ND - DigiKey
Infineon Technologies AG
Specs
Memory Category SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 1000 kbits
View Details
3 suppliers
Memory - AS28C010 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 120 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 24C01-I/P - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 900 ns
Density 1 kbits
View Details
SDRAM - 1882600 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Bits per Word 8 bits
View Details