Renesas Electronics Corporation Memory 71024S20YG

Description
IC SRAM 1MBIT PARALLEL 32SOJ
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Description
IC SRAM 1MBIT PARALLEL 32SOJ
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Datasheet
Datasheet Summary
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The 71024S20YG is a 1 Megabit (128K x 8) high-speed CMOS static RAM from Quarktwin Technology Ltd. It operates with access and cycle times of 20 nanoseconds, making it suitable for applications requiring fast memory access. The device is available in both commercial (0¬8C to +70¬8C) and industrial (,Äì40¬8C to +85¬8C) temperature ranges, providing flexibility for various environmental conditions. This SRAM features two chip selects and one output enable pin, allowing for efficient control of memory access. It is TTL-compatible, ensuring easy integration with other digital circuits. The memory operates from a single 5V supply and utilizes fully static asynchronous circuitry, eliminating the need for refresh cycles. The 71024S20YG is packaged in a 32-pin 400 mil Plastic SOJ, which is advantageous for space-constrained designs. Additionally, low power consumption is achieved through chip deselect functionality, making it suitable for battery-operated devices.

Datasheet Summary
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The 71024S20YG is a 1 Megabit (128K x 8) high-speed CMOS static RAM from Quarktwin Technology Ltd. It operates with access and cycle times of 20 nanoseconds, making it suitable for applications requiring fast memory access. The device is available in both commercial (0¬8C to +70¬8C) and industrial (,Äì40¬8C to +85¬8C) temperature ranges, providing flexibility for various environmental conditions. This SRAM features two chip selects and one output enable pin, allowing for efficient control of memory access. It is TTL-compatible, ensuring easy integration with other digital circuits. The memory operates from a single 5V supply and utilizes fully static asynchronous circuitry, eliminating the need for refresh cycles. The 71024S20YG is packaged in a 32-pin 400 mil Plastic SOJ, which is advantageous for space-constrained designs. Additionally, low power consumption is achieved through chip deselect functionality, making it suitable for battery-operated devices.

Suppliers

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Product
Description
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IC SRAM 1MBIT PARALLEL 32SOJ

IC SRAM 1MBIT PARALLEL 32SOJ

Supplier's Site Datasheet
Memory IC and Storage Component - 774-71024S20YG - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-71024S20YG
Memory IC and Storage Component 774-71024S20YG
IC SRAM 1MBIT PARALLEL 32SOJ Product overview: 71024S20YG from Renesas Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-71024S20YG can be used for catalog matching and distributor lookup.

IC SRAM 1MBIT PARALLEL 32SOJ Product overview: 71024S20YG from Renesas Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-71024S20YG can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - 71024S20YG-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 1Mb (128K x 8) Parallel 20ns 32-SOJ

SRAM - Asynchronous Memory IC 1Mb (128K x 8) Parallel 20ns 32-SOJ

Buy Now Datasheet
Memory - 71024S20YG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 1Mbit Parallel 20 ns 32-SOJ

SRAM - Asynchronous Memory IC 1Mbit Parallel 20 ns 32-SOJ

Buy Now Datasheet
IC SRAM 1MBIT PARALLEL 32SOJ

IC SRAM 1MBIT PARALLEL 32SOJ

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 71024S20YG 774-71024S20YG 71024S20YG-ND 71024S20YG 71024S20YG
Product Name Memory Memory IC and Storage Component Memory Memory Memory
Memory Category SRAM - Asynchronous; SRAM Chip Volatile; SRAM Chip SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Access Time 20 ns 20 ns 20 ns 20 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 1000 kbits 1000 kbits 1000 kbits 1000 kbits
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