Renesas Electronics Corporation Memory 71016S20YG8

Description
IC SRAM 1MBIT PARALLEL 44SOJ
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Description
IC SRAM 1MBIT PARALLEL 44SOJ
Request a Quote Datasheet

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Product
Description
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IC SRAM 1MBIT PARALLEL 44SOJ

IC SRAM 1MBIT PARALLEL 44SOJ

Supplier's Site Datasheet
Memory - 71016S20YG8-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 1Mb (64K x 16) Parallel 20ns 44-SOJ

SRAM - Asynchronous Memory IC 1Mb (64K x 16) Parallel 20ns 44-SOJ

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71016S20YG8 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71016S20YG8
Integrated Circuits (ICs) - Memory - Memory 71016S20YG8
IC SRAM 1MBIT PARALLEL 44SOJ

IC SRAM 1MBIT PARALLEL 44SOJ

Supplier's Site
Memory - 71016S20YG8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 1Mbit Parallel 20 ns 44-SOJ

SRAM - Asynchronous Memory IC 1Mbit Parallel 20 ns 44-SOJ

Buy Now Datasheet
IC SRAM 1MBIT PARALLEL 44SOJ

IC SRAM 1MBIT PARALLEL 44SOJ

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 71016S20YG8 71016S20YG8-ND 71016S20YG8 71016S20YG8 71016S20YG8
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category SRAM - Asynchronous; SRAM Chip SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Access Time 20 ns 20 ns 20 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 1000 kbits 1000 kbits 1000 kbits 1000 kbits 1000 kbits
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