Renesas Electronics Corporation Memory 71016NS12PH8

Description
SRAM - Asynchronous Memory IC 1Mbit Parallel 12 ns 44-TSOP II
Description
SRAM - Asynchronous Memory IC 1Mbit Parallel 12 ns 44-TSOP II

Suppliers

Company
Product
Description
Supplier Links
Memory - 71016NS12PH8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 1Mbit Parallel 12 ns 44-TSOP II

SRAM - Asynchronous Memory IC 1Mbit Parallel 12 ns 44-TSOP II

Buy Now
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
71016NS12PH8
Integrated Circuits (ICs) - Memory - Memory 71016NS12PH8
IC SRAM ASYNCH

IC SRAM ASYNCH

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips
Product Number 71016NS12PH8 71016NS12PH8
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 1000 kbits 64 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1712234P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 64000 kbits
Package Type SOIC; SOIC
View Details
Memory - SMJ4C1024 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 27C512-70WMB - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 70 ns
Density 512 kbits
View Details
Integrated Circuits (ICs) - Memory - Memory - 93Z667DMQB65 - Acme Chip Technology Co., Limited
Specs
Memory Category PROM; Non-Volatile
Cycle Time 65 ns
Density 64 kbits
View Details
2 suppliers