Renesas Electronics Corporation Memory 71016NS12PH8

Description
SRAM - Asynchronous Memory IC 1Mbit Parallel 12 ns 44-TSOP II
Description
SRAM - Asynchronous Memory IC 1Mbit Parallel 12 ns 44-TSOP II

Suppliers

Company
Product
Description
Supplier Links
Memory - 71016NS12PH8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 1Mbit Parallel 12 ns 44-TSOP II

SRAM - Asynchronous Memory IC 1Mbit Parallel 12 ns 44-TSOP II

Buy Now
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
71016NS12PH8
Integrated Circuits (ICs) - Memory - Memory 71016NS12PH8
IC SRAM ASYNCH

IC SRAM ASYNCH

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips
Product Number 71016NS12PH8 71016NS12PH8
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 1000 kbits 64 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - Controllers - DP8421ATVX-25 - Lingto Electronic Limited
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type 68-LCC (J-Lead)
View Details
2 suppliers
Memory - 71V2556SA133BGI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 4.2 ns
Density 4500 kbits
View Details
Memory - CY14B104N-BA45XI-ND - DigiKey
Infineon Technologies AG
Specs
Memory Category NVRAM; NVSRAM
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 4000 kbits
View Details
2 suppliers
Memory - MT5C1008 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details