The 70V7519S133DRI is a high-speed 256K x 36 synchronous bank-switchable dual-port static RAM from Quarktwin Technology Ltd., featuring a maximum access time of 4.2 ns at 133 MHz. This memory device is organized into 64 independent 4K x 36 banks, allowing simultaneous access from both ports, which can operate independently with separate control, address, and I/O pins. The device supports both 3.3V and 2.5V power supply options for I/O and control signals, while the core operates at 3.3V. The 70V7519S133DRI is designed for applications requiring fast data access and low power consumption, with an automatic power-down feature that enables low standby power mode. It operates within an industrial temperature range of -40°C to +85°C and is available in a 208-pin fine pitch Ball Grid Array (fpBGA) package. The device also supports JTAG features compliant with IEEE 1149.1, making it suitable for various high-performance applications.
SRAM - Dual Port, Synchronous Memory IC 9Mb (256K x 36) Parallel 133MHz 4.2ns 208-PQFP (28x28)
IC SRAM 9MBIT PARALLEL 208PQFP
IC SRAM 9MBIT PARALLEL 208PQFP
SRAM - Dual Port, Synchronous Memory IC 9Mbit Parallel 133 MHz 4.2 ns 208-PQFP (28x28)
| DigiKey | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 70V7519S133DRI-ND | 70V7519S133DRI | 70V7519S133DRI | 70V7519S133DRI |
| Product Name | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | SRAM Chip | Volatile; SRAM Chip | SRAM; SRAM Chip | SRAM; SRAM Chip |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 9000 kbits | 9000 kbits | 9000 kbits | 9000 kbits |
| Package Type | 208-BFQFP | QFP; 208-BFQFP |
