Renesas Electronics Corporation Memory 70V7319S133BC

Description
SRAM - Dual Port, Synchronous Memory IC 4.5Mb (256K x 18) Parallel 133MHz 4.2ns 256-CABGA (17x17)
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Description
SRAM - Dual Port, Synchronous Memory IC 4.5Mb (256K x 18) Parallel 133MHz 4.2ns 256-CABGA (17x17)
Request a Quote
Datasheet
Datasheet Summary
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The 70V7319S133BC is a high-speed 256K x 18 synchronous bank-switchable dual-port static RAM from Quarktwin Technology Ltd. It features a maximum access time of 4.2 ns at 133 MHz, making it suitable for applications requiring fast data access. The device is organized into 64 independent 4K x 18 banks, allowing simultaneous access from both ports, which can operate independently with separate control, address, and I/O pins. This SRAM supports a selectable power supply of either 3.3V or 2.5V for I/O and control signals, while the core operates at 3.3V. It is designed for industrial temperature ranges from -40¬8C to +85¬8C and is available in a 256-pin CABGA package. The product also includes features such as self-timed write capabilities, automatic power-down modes, and compliance with JTAG standards. The dual chip enables facilitate depth expansion without additional logic, making it a versatile choice for various applications.

Datasheet Summary
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The 70V7319S133BC is a high-speed 256K x 18 synchronous bank-switchable dual-port static RAM from Quarktwin Technology Ltd. It features a maximum access time of 4.2 ns at 133 MHz, making it suitable for applications requiring fast data access. The device is organized into 64 independent 4K x 18 banks, allowing simultaneous access from both ports, which can operate independently with separate control, address, and I/O pins. This SRAM supports a selectable power supply of either 3.3V or 2.5V for I/O and control signals, while the core operates at 3.3V. It is designed for industrial temperature ranges from -40¬8C to +85¬8C and is available in a 256-pin CABGA package. The product also includes features such as self-timed write capabilities, automatic power-down modes, and compliance with JTAG standards. The dual chip enables facilitate depth expansion without additional logic, making it a versatile choice for various applications.

Suppliers

Company
Product
Description
Supplier Links
Memory - 70V7319S133BC-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Dual Port, Synchronous Memory IC 4.5Mb (256K x 18) Parallel 133MHz 4.2ns 256-CABGA (17x17)

SRAM - Dual Port, Synchronous Memory IC 4.5Mb (256K x 18) Parallel 133MHz 4.2ns 256-CABGA (17x17)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 70V7319S133BC - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
70V7319S133BC
Integrated Circuits (ICs) - Memory - Memory 70V7319S133BC
IC SRAM 4.5MBIT PAR 256CABGA

IC SRAM 4.5MBIT PAR 256CABGA

Supplier's Site
IC SRAM 4.5MBIT PAR 256CABGA

IC SRAM 4.5MBIT PAR 256CABGA

Supplier's Site Datasheet
Memory - 70V7319S133BC - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Dual Port, Synchronous Memory IC 4.5Mbit Parallel 133 MHz 4.2 ns 256-CABGA (17x17)

SRAM - Dual Port, Synchronous Memory IC 4.5Mbit Parallel 133 MHz 4.2 ns 256-CABGA (17x17)

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 70V7319S133BC-ND 70V7319S133BC 70V7319S133BC 70V7319S133BC
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 4500 kbits 4500 kbits 4500 kbits 4500 kbits
Package Type 256-LBGA BGA; 256-LBGA
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