Renesas Electronics Corporation Memory 70V659S12DRI

Description
SRAM - Dual Port, Asynchronous Memory IC 4.5Mbit Parallel 12 ns 208-PQFP (28x28)
Datasheet
Description
SRAM - Dual Port, Asynchronous Memory IC 4.5Mbit Parallel 12 ns 208-PQFP (28x28)
Datasheet

Suppliers

Company
Product
Description
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Memory - 70V659S12DRI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Dual Port, Asynchronous Memory IC 4.5Mbit Parallel 12 ns 208-PQFP (28x28)

SRAM - Dual Port, Asynchronous Memory IC 4.5Mbit Parallel 12 ns 208-PQFP (28x28)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 70V659S12DRI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
70V659S12DRI
Integrated Circuits (ICs) - Memory - Memory 70V659S12DRI
IC SRAM 4.5MBIT PARALLEL 208PQFP

IC SRAM 4.5MBIT PARALLEL 208PQFP

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number 70V659S12DRI 70V659S12DRI
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 12 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 4500 kbits 4500 kbits
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