Renesas Electronics Corporation Memory 70V658S12BC

Description
SRAM - Dual Port, Asynchronous Memory IC 2Mb (64K x 36) Parallel 12ns 256-CABGA (17x17)
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Description
SRAM - Dual Port, Asynchronous Memory IC 2Mb (64K x 36) Parallel 12ns 256-CABGA (17x17)
Request a Quote
Datasheet
Datasheet Summary
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The 70V658S12BC is a high-speed, asynchronous dual-port static RAM from Quarktwin Technology Ltd., featuring a memory configuration of 128/64/32K x 36 bits. It operates at a voltage of 3.3V (¬±150mV) for the core and offers selectable I/O voltage levels of 3.3V (¬±150mV) or 2.5V (¬±100mV). This device supports simultaneous access to the same memory location from both ports, making it suitable for applications requiring high-speed data transfer and efficient memory management. The memory chip includes on-chip hardware for semaphore signaling and supports JTAG features compliant with IEEE 1149.1. It is available in multiple package types, including a 208-pin Plastic Quad Flatpack and various Ball Grid Array configurations. The device operates within an industrial temperature range of -40¬8C to +85¬8C, ensuring reliability in demanding environments. The 70V658S12BC is designed for applications that require fast, dual-port memory solutions without the need for additional external logic for depth expansion.

Datasheet Summary
Powered by GS/AI

The 70V658S12BC is a high-speed, asynchronous dual-port static RAM from Quarktwin Technology Ltd., featuring a memory configuration of 128/64/32K x 36 bits. It operates at a voltage of 3.3V (¬±150mV) for the core and offers selectable I/O voltage levels of 3.3V (¬±150mV) or 2.5V (¬±100mV). This device supports simultaneous access to the same memory location from both ports, making it suitable for applications requiring high-speed data transfer and efficient memory management. The memory chip includes on-chip hardware for semaphore signaling and supports JTAG features compliant with IEEE 1149.1. It is available in multiple package types, including a 208-pin Plastic Quad Flatpack and various Ball Grid Array configurations. The device operates within an industrial temperature range of -40¬8C to +85¬8C, ensuring reliability in demanding environments. The 70V658S12BC is designed for applications that require fast, dual-port memory solutions without the need for additional external logic for depth expansion.

Suppliers

Company
Product
Description
Supplier Links
Memory - 70V658S12BC-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Dual Port, Asynchronous Memory IC 2Mb (64K x 36) Parallel 12ns 256-CABGA (17x17)

SRAM - Dual Port, Asynchronous Memory IC 2Mb (64K x 36) Parallel 12ns 256-CABGA (17x17)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 70V658S12BC - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
70V658S12BC
Integrated Circuits (ICs) - Memory - Memory 70V658S12BC
IC SRAM 2MBIT PARALLEL 256CABGA

IC SRAM 2MBIT PARALLEL 256CABGA

Supplier's Site
IC SRAM 2MBIT PARALLEL 256CABGA

IC SRAM 2MBIT PARALLEL 256CABGA

Supplier's Site Datasheet
Memory - 70V658S12BC - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Dual Port, Asynchronous Memory IC 2Mbit Parallel 12 ns 256-CABGA (17x17)

SRAM - Dual Port, Asynchronous Memory IC 2Mbit Parallel 12 ns 256-CABGA (17x17)

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 70V658S12BC-ND 70V658S12BC 70V658S12BC 70V658S12BC
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 2000 kbits 2000 kbits 2000 kbits 2000 kbits
Package Type 256-LBGA BGA; 256-LBGA
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