Renesas Electronics Corporation Memory 70V657S12DRGI

Description
SRAM - Dual Port, Asynchronous Memory IC 1.125Mbit Parallel 12 ns 208-PQFP (28x28)
Datasheet
Description
SRAM - Dual Port, Asynchronous Memory IC 1.125Mbit Parallel 12 ns 208-PQFP (28x28)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 70V657S12DRGI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Dual Port, Asynchronous Memory IC 1.125Mbit Parallel 12 ns 208-PQFP (28x28)

SRAM - Dual Port, Asynchronous Memory IC 1.125Mbit Parallel 12 ns 208-PQFP (28x28)

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
70V657S12DRGI
Integrated Circuits (ICs) - Memory - Memory 70V657S12DRGI
IC SRAM 1.125MBIT PAR 208PQFP

IC SRAM 1.125MBIT PAR 208PQFP

Supplier's Site
IC SRAM 1.125MBIT PAR 208PQFP

IC SRAM 1.125MBIT PAR 208PQFP

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 70V657S12DRGI 70V657S12DRGI 70V657S12DRGI
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Access Time 12 ns 12 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 1125 kbits 1125 kbits 1125 kbits
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