The 70V657S12DR is a high-speed asynchronous dual-port static RAM from Quarktwin Technology Ltd., featuring a memory configuration of 128K x 36 bits. It operates at a voltage of 3.3V (¬±150mV) for the core and supports selectable I/O voltages of either 3.3V or 2.5V. The device is designed for independent, simultaneous access from both ports, allowing for efficient data handling in applications requiring dual-port memory. It includes built-in semaphore signaling for inter-port communication and supports JTAG features compliant with IEEE 1149.1. The memory is available in a 208-pin Plastic Quad Flatpack package and is suitable for industrial temperature ranges from -40¬8C to +85¬8C. The 70V657S12DR is ideal for applications that require fast access times, with a maximum speed of 12ns, and can be used in systems that benefit from dual-chip enable functionality for depth expansion.
SRAM - Dual Port, Asynchronous Memory IC 1.125Mb (32K x 36) Parallel 12ns 208-PQFP (28x28)
IC SRAM 1.125MBIT PAR 208PQFP
SRAM - Dual Port, Asynchronous Memory IC 1.125Mbit Parallel 12 ns 208-PQFP (28x28)
IC SRAM 1.125MBIT PAR 208PQFP
| DigiKey | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 70V657S12DR-ND | 70V657S12DR | 70V657S12DR | 70V657S12DR |
| Product Name | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | SRAM Chip | Volatile; SRAM Chip | SRAM; SRAM Chip | SRAM; SRAM Chip |
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | ||
| Density | 1125 kbits | 1125 kbits | 1125 kbits | 1125 kbits |
| Package Type | 208-BFQFP | QFP; 208-BFQFP |
