Renesas Electronics Corporation Memory 70V657S12BCI

Description
IC SRAM 1.125MBIT PAR 256CABGA
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Description
IC SRAM 1.125MBIT PAR 256CABGA
Request a Quote Datasheet

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Product
Description
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IC SRAM 1.125MBIT PAR 256CABGA

IC SRAM 1.125MBIT PAR 256CABGA

Supplier's Site Datasheet
Memory - 70V657S12BCI-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Dual Port, Asynchronous Memory IC 1.125Mb (32K x 36) Parallel 12ns 256-CABGA (17x17)

SRAM - Dual Port, Asynchronous Memory IC 1.125Mb (32K x 36) Parallel 12ns 256-CABGA (17x17)

Buy Now Datasheet
Memory - 70V657S12BCI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Dual Port, Asynchronous Memory IC 1.125Mbit Parallel 12 ns 256-CABGA (17x17)

SRAM - Dual Port, Asynchronous Memory IC 1.125Mbit Parallel 12 ns 256-CABGA (17x17)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 70V657S12BCI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
70V657S12BCI
Integrated Circuits (ICs) - Memory - Memory 70V657S12BCI
IC SRAM 1.125MBIT PAR 256CABGA

IC SRAM 1.125MBIT PAR 256CABGA

Supplier's Site
IC SRAM 1.125MBIT PAR 256CABGA

IC SRAM 1.125MBIT PAR 256CABGA

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 70V657S12BCI 70V657S12BCI-ND 70V657S12BCI 70V657S12BCI 70V657S12BCI
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM - Dual Port, Asynchronous; SRAM Chip SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Access Time 12 ns 12 ns 12 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 1125 kbits 1125 kbits 1125 kbits 1125 kbits 1125 kbits
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