Renesas Electronics Corporation Memory 70V3389S6BC8

Description
SRAM - Dual Port, Synchronous Memory IC 1.125Mb (64K x 18) Parallel 6ns 256-CABGA (17x17)
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Description
SRAM - Dual Port, Synchronous Memory IC 1.125Mb (64K x 18) Parallel 6ns 256-CABGA (17x17)
Request a Quote
Datasheet
Datasheet Summary
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The 70V3389S6BC8 is a high-speed dual-port synchronous pipelined static RAM from Quarktwin Technology Ltd., featuring a memory configuration of 64K x 18 bits. It operates at a maximum clock speed of 133 MHz, providing a bandwidth of 9.6 Gbps, with a fast clock-to-data output time of 4.2 ns. The device supports both 3.3V and 2.5V power supply options for I/O and control signals, while the core operates at 3.3V. This memory chip allows simultaneous access to the same memory location from both ports, making it suitable for applications requiring high data throughput. It includes features such as pipelined output mode, counter enable and reset capabilities, and separate byte controls for multiplexed bus compatibility. The device is available in multiple package types, including a 256-pin CABGA, and is rated for industrial temperature ranges from -40¬8C to +85¬8C. Engineers looking for a reliable dual-port memory solution with high-speed performance and flexible power supply options may find the 70V3389S6BC8 suitable for their projects.

Datasheet Summary
Powered by GS/AI

The 70V3389S6BC8 is a high-speed dual-port synchronous pipelined static RAM from Quarktwin Technology Ltd., featuring a memory configuration of 64K x 18 bits. It operates at a maximum clock speed of 133 MHz, providing a bandwidth of 9.6 Gbps, with a fast clock-to-data output time of 4.2 ns. The device supports both 3.3V and 2.5V power supply options for I/O and control signals, while the core operates at 3.3V. This memory chip allows simultaneous access to the same memory location from both ports, making it suitable for applications requiring high data throughput. It includes features such as pipelined output mode, counter enable and reset capabilities, and separate byte controls for multiplexed bus compatibility. The device is available in multiple package types, including a 256-pin CABGA, and is rated for industrial temperature ranges from -40¬8C to +85¬8C. Engineers looking for a reliable dual-port memory solution with high-speed performance and flexible power supply options may find the 70V3389S6BC8 suitable for their projects.

Suppliers

Company
Product
Description
Supplier Links
Memory - 70V3389S6BC8-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Dual Port, Synchronous Memory IC 1.125Mb (64K x 18) Parallel 6ns 256-CABGA (17x17)

SRAM - Dual Port, Synchronous Memory IC 1.125Mb (64K x 18) Parallel 6ns 256-CABGA (17x17)

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Integrated Circuits (ICs) - Memory - Memory - 70V3389S6BC8 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
70V3389S6BC8
Integrated Circuits (ICs) - Memory - Memory 70V3389S6BC8
IC SRAM 1.125MBIT PAR 256CABGA

IC SRAM 1.125MBIT PAR 256CABGA

Supplier's Site
IC SRAM 1.125MBIT PAR 256CABGA

IC SRAM 1.125MBIT PAR 256CABGA

Supplier's Site Datasheet
Memory - 70V3389S6BC8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Dual Port, Synchronous Memory IC 1.125Mbit Parallel 6 ns 256-CABGA (17x17)

SRAM - Dual Port, Synchronous Memory IC 1.125Mbit Parallel 6 ns 256-CABGA (17x17)

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 70V3389S6BC8-ND 70V3389S6BC8 70V3389S6BC8 70V3389S6BC8
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 1125 kbits 1125 kbits 1125 kbits 1125 kbits
Package Type 256-LBGA BGA; 256-LBGA
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