Renesas Electronics Corporation Memory 70V3379S5BF8

Description
SRAM - Dual Port, Synchronous Memory IC 576Kb (32K x 18) Parallel 5ns 208-CABGA (15x15)
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Description
SRAM - Dual Port, Synchronous Memory IC 576Kb (32K x 18) Parallel 5ns 208-CABGA (15x15)
Request a Quote
Datasheet
Datasheet Summary
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The 70V3379S5BF8 is a high-speed, dual-port synchronous pipelined static RAM from Quarktwin Technology Ltd., featuring a memory configuration of 32K x 18 bits. It supports simultaneous access from both ports, allowing for efficient data handling in applications requiring high throughput. The device operates with a maximum clock speed of 133 MHz, providing a bandwidth of 9.6 Gbps, and has a fast clock-to-data output time of 4.2 ns. This memory chip is designed for both commercial and industrial temperature ranges, with an operating voltage of 3.3V or 2.5V selectable for I/O and control signals. It includes features such as pipelined output mode, counter enable and reset capabilities, and dual chip enables for depth expansion without additional logic. The 70V3379S5BF8 is available in a 208-pin fine pitch Ball Grid Array package, making it suitable for compact designs. Engineers looking for a reliable dual-port memory solution with high-speed performance and flexible voltage options may find this product suitable for their projects.

Datasheet Summary
Powered by GS/AI

The 70V3379S5BF8 is a high-speed, dual-port synchronous pipelined static RAM from Quarktwin Technology Ltd., featuring a memory configuration of 32K x 18 bits. It supports simultaneous access from both ports, allowing for efficient data handling in applications requiring high throughput. The device operates with a maximum clock speed of 133 MHz, providing a bandwidth of 9.6 Gbps, and has a fast clock-to-data output time of 4.2 ns. This memory chip is designed for both commercial and industrial temperature ranges, with an operating voltage of 3.3V or 2.5V selectable for I/O and control signals. It includes features such as pipelined output mode, counter enable and reset capabilities, and dual chip enables for depth expansion without additional logic. The 70V3379S5BF8 is available in a 208-pin fine pitch Ball Grid Array package, making it suitable for compact designs. Engineers looking for a reliable dual-port memory solution with high-speed performance and flexible voltage options may find this product suitable for their projects.

Suppliers

Company
Product
Description
Supplier Links
Memory - 70V3379S5BF8-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Dual Port, Synchronous Memory IC 576Kb (32K x 18) Parallel 5ns 208-CABGA (15x15)

SRAM - Dual Port, Synchronous Memory IC 576Kb (32K x 18) Parallel 5ns 208-CABGA (15x15)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 70V3379S5BF8 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
70V3379S5BF8
Integrated Circuits (ICs) - Memory - Memory 70V3379S5BF8
IC SRAM 576KBIT PAR 208CABGA

IC SRAM 576KBIT PAR 208CABGA

Supplier's Site
Memory - 70V3379S5BF8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Dual Port, Synchronous Memory IC 576Kbit Parallel 5 ns 208-CABGA (15x15)

SRAM - Dual Port, Synchronous Memory IC 576Kbit Parallel 5 ns 208-CABGA (15x15)

Buy Now Datasheet
IC SRAM 576KBIT PAR 208CABGA

IC SRAM 576KBIT PAR 208CABGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 70V3379S5BF8-ND 70V3379S5BF8 70V3379S5BF8 70V3379S5BF8
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Package Type 208-LFBGA BGA; 208-LFBGA
Supply Voltage 3.15V ~ 3.45V Surface Mount 3.15V ~ 3.45V
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