Renesas Electronics Corporation Memory 70V3319S166BF8

Description
SRAM - Dual Port, Synchronous Memory IC 4.5Mb (256K x 18) Parallel 166MHz 3.6ns 208-CABGA (15x15)
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Description
SRAM - Dual Port, Synchronous Memory IC 4.5Mb (256K x 18) Parallel 166MHz 3.6ns 208-CABGA (15x15)
Request a Quote
Datasheet
Datasheet Summary
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The 70V3319S166BF8 is a high-speed dual-port synchronous static RAM from Quarktwin Technology Ltd., featuring a memory configuration of 256K x 18 bits. It operates at a core voltage of 3.3V (¬±150mV) and supports selectable I/O voltages of either 3.3V or 2.5V, making it versatile for various applications. The device is designed for high-speed performance, with maximum access times of 3.6ns at 166MHz and 4.2ns at 133MHz. It supports full synchronous operation on both ports, allowing simultaneous access to the same memory location, which is beneficial for applications requiring high data throughput. The memory supports pipelined or flow-through output modes, although the pipelined option is limited to certain package types. It includes features such as self-timed write capabilities, dual cycle deselect for pipelined output mode, and automatic power-down functionality to minimize power consumption during idle periods. The device is available in a 208-pin fine pitch Ball Grid Array (BGA) package and operates within an industrial temperature range of -40¬8C to +85¬8C. This product is suitable for applications that demand high-speed data access and dual-port functionality.

Datasheet Summary
Powered by GS/AI

The 70V3319S166BF8 is a high-speed dual-port synchronous static RAM from Quarktwin Technology Ltd., featuring a memory configuration of 256K x 18 bits. It operates at a core voltage of 3.3V (¬±150mV) and supports selectable I/O voltages of either 3.3V or 2.5V, making it versatile for various applications. The device is designed for high-speed performance, with maximum access times of 3.6ns at 166MHz and 4.2ns at 133MHz. It supports full synchronous operation on both ports, allowing simultaneous access to the same memory location, which is beneficial for applications requiring high data throughput. The memory supports pipelined or flow-through output modes, although the pipelined option is limited to certain package types. It includes features such as self-timed write capabilities, dual cycle deselect for pipelined output mode, and automatic power-down functionality to minimize power consumption during idle periods. The device is available in a 208-pin fine pitch Ball Grid Array (BGA) package and operates within an industrial temperature range of -40¬8C to +85¬8C. This product is suitable for applications that demand high-speed data access and dual-port functionality.

Suppliers

Company
Product
Description
Supplier Links
Memory - 70V3319S166BF8-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Dual Port, Synchronous Memory IC 4.5Mb (256K x 18) Parallel 166MHz 3.6ns 208-CABGA (15x15)

SRAM - Dual Port, Synchronous Memory IC 4.5Mb (256K x 18) Parallel 166MHz 3.6ns 208-CABGA (15x15)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 70V3319S166BF8 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
70V3319S166BF8
Integrated Circuits (ICs) - Memory - Memory 70V3319S166BF8
IC SRAM 4.5MBIT PAR 208CABGA

IC SRAM 4.5MBIT PAR 208CABGA

Supplier's Site
Memory - 70V3319S166BF8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Dual Port, Synchronous Memory IC 4.5Mbit Parallel 166 MHz 3.6 ns 208-CABGA (15x15)

SRAM - Dual Port, Synchronous Memory IC 4.5Mbit Parallel 166 MHz 3.6 ns 208-CABGA (15x15)

Buy Now Datasheet
IC SRAM 4.5MBIT PAR 208CABGA

IC SRAM 4.5MBIT PAR 208CABGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 70V3319S166BF8-ND 70V3319S166BF8 70V3319S166BF8 70V3319S166BF8
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 4500 kbits 4500 kbits 4500 kbits 4500 kbits
Package Type 208-LFBGA BGA BGA; 208-LFBGA
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