Renesas Electronics Corporation Memory 70T659S10BC8

Description
SRAM - Dual Port, Asynchronous Memory IC 4.5Mb (128K x 36) Parallel 10ns 256-CABGA (17x17)
Request a Quote Datasheet
Description
SRAM - Dual Port, Asynchronous Memory IC 4.5Mb (128K x 36) Parallel 10ns 256-CABGA (17x17)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 70T659S10BC8-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Dual Port, Asynchronous Memory IC 4.5Mb (128K x 36) Parallel 10ns 256-CABGA (17x17)

SRAM - Dual Port, Asynchronous Memory IC 4.5Mb (128K x 36) Parallel 10ns 256-CABGA (17x17)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 70T659S10BC8 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
70T659S10BC8
Integrated Circuits (ICs) - Memory - Memory 70T659S10BC8
IC SRAM 4.5MBIT PAR 256CABGA

IC SRAM 4.5MBIT PAR 256CABGA

Supplier's Site
IC SRAM 4.5MBIT PAR 256CABGA

IC SRAM 4.5MBIT PAR 256CABGA

Supplier's Site Datasheet
Memory - 70T659S10BC8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Dual Port, Asynchronous Memory IC 4.5Mbit Parallel 10 ns 256-CABGA (17x17)

SRAM - Dual Port, Asynchronous Memory IC 4.5Mbit Parallel 10 ns 256-CABGA (17x17)

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 70T659S10BC8-ND 70T659S10BC8 70T659S10BC8 70T659S10BC8
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 4500 kbits 4500 kbits 4500 kbits 4500 kbits
Package Type 256-LBGA BGA BGA; 256-LBGA
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