Renesas Electronics Corporation Memory 70T651S10BFGI8

Description
SRAM - Dual Port, Asynchronous Memory IC 9Mbit Parallel 10 ns 208-CABGA (15x15)
Datasheet
Description
SRAM - Dual Port, Asynchronous Memory IC 9Mbit Parallel 10 ns 208-CABGA (15x15)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 70T651S10BFGI8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Dual Port, Asynchronous Memory IC 9Mbit Parallel 10 ns 208-CABGA (15x15)

SRAM - Dual Port, Asynchronous Memory IC 9Mbit Parallel 10 ns 208-CABGA (15x15)

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
70T651S10BFGI8
Integrated Circuits (ICs) - Memory - Memory 70T651S10BFGI8
IC SRAM 9MBIT PARALLEL 208CABGA

IC SRAM 9MBIT PARALLEL 208CABGA

Supplier's Site
IC SRAM 9MBIT PARALLEL 208FPBGA

IC SRAM 9MBIT PARALLEL 208FPBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 70T651S10BFGI8 70T651S10BFGI8 70T651S10BFGI8
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Access Time 10 ns 10 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 9000 kbits 9000 kbits 9000 kbits
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