Renesas Electronics Corporation Integrated Circuits (ICs) - Memory - Memory 70T651S10BFG

Description
IC SRAM 9MBIT PARALLEL 208CABGA
Datasheet
Description
IC SRAM 9MBIT PARALLEL 208CABGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Futian, China
Integrated Circuits (ICs) - Memory - Memory
70T651S10BFG
Integrated Circuits (ICs) - Memory - Memory 70T651S10BFG
IC SRAM 9MBIT PARALLEL 208CABGA

IC SRAM 9MBIT PARALLEL 208CABGA

Supplier's Site
Memory - 70T651S10BFG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Dual Port, Asynchronous Memory IC 9Mbit Parallel 10 ns 208-CABGA (15x15)

SRAM - Dual Port, Asynchronous Memory IC 9Mbit Parallel 10 ns 208-CABGA (15x15)

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Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number 70T651S10BFG 70T651S10BFG
Product Name Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Volatile; SRAM Chip SRAM; SRAM Chip
Cycle Time 10 ns
Density 9000 kbits 9000 kbits
Supply Voltage Surface Mount 2.4V ~ 2.6V
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