The 70T651S10BCI is a high-speed 256/128K x 36 asynchronous dual-port static RAM from Quarktwin Technology Ltd. It operates at a core voltage of 2.5V and supports LVTTL-compatible I/O voltages of either 3.3V or 2.5V. This memory device features true dual-port architecture, allowing simultaneous access to the same memory location from both ports, which is beneficial for high-performance applications. The device supports fully asynchronous operation and includes on-chip hardware for semaphore signaling and port arbitration. It has a RapidWrite Mode that facilitates back-to-back write operations without the need to pulse the R/W input each cycle, enhancing performance at cycle times as low as 10ns. The 70T651S10BCI is available in a 256-ball Ball Grid Array package and is suitable for both commercial and industrial temperature ranges (-40°C to +85°C). Additionally, it includes a sleep mode feature for low power consumption during idle periods. Engineers looking for a reliable dual-port SRAM solution with high-speed access and flexible voltage options may find the 70T651S10BCI suitable for their projects.
SRAM - Dual Port, Asynchronous Memory IC 9Mb (256K x 36) Parallel 10ns 256-CABGA (17x17)
IC SRAM 9MBIT PARALLEL 256CABGA
IC SRAM 9MBIT PARALLEL 256CABGA
SRAM - Dual Port, Asynchronous Memory IC 9Mbit Parallel 10 ns 256-CABGA (17x17)
| DigiKey | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 70T651S10BCI-ND | 70T651S10BCI | 70T651S10BCI | 70T651S10BCI |
| Product Name | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | SRAM Chip | Volatile; SRAM Chip | SRAM; SRAM Chip | SRAM; SRAM Chip |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 9000 kbits | 9000 kbits | 9000 kbits | 9000 kbits |
| Package Type | 256-LBGA | BGA; 256-LBGA |
