Renesas Electronics Corporation Memory 70T633S12BFI

Description
SRAM - Dual Port, Asynchronous Memory IC 9Mb (512K x 18) Parallel 12ns 208-CABGA (15x15)
Request a Quote Datasheet
Description
SRAM - Dual Port, Asynchronous Memory IC 9Mb (512K x 18) Parallel 12ns 208-CABGA (15x15)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 70T633S12BFI-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Dual Port, Asynchronous Memory IC 9Mb (512K x 18) Parallel 12ns 208-CABGA (15x15)

SRAM - Dual Port, Asynchronous Memory IC 9Mb (512K x 18) Parallel 12ns 208-CABGA (15x15)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 1317186-70T633S12BFI - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory - Memory
1317186-70T633S12BFI
Integrated Circuits (ICs) - Memory - Memory 1317186-70T633S12BFI
Manufacturer: Renesas Electronics America Inc Win Source Part Number: 1317186-70T633S12BFI Category: Integrated Circuits (ICs)>Memory>Memory Packaging: Tray Standard Package: 7 Mounting: Surface Mount Technology: SRAM - Dual Port, Asynchronous Memory Type: Volatile Memory Size: 9Mb (512K x 18) Access Time: 12 ns Voltage - Supply: 2.4V ~ 2.6V Supplier Device Package: 208-CABGA (15x15) Temperature Range - Operating: -40°C ~ 85°C Case / Package: 208-LFBGA Memory Format: SRAM Write Cycle Time - Word, Page: 12ns Memory Interface: Parallel ECCN: 3A991B2A Fake Threat In the Open Market: 78 MSL Level: 4 (72 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0041 Other Part Number: IDT70T633S12BFI,IDT7 0T633S12BFI-ND Base Product Number: 70T633 RoHS Status: RoHS non-compliant

Manufacturer: Renesas Electronics America Inc
Win Source Part Number: 1317186-70T633S12BFI
Category: Integrated Circuits (ICs)>Memory>Memory
Packaging: Tray
Standard Package: 7
Mounting: Surface Mount
Technology: SRAM - Dual Port, Asynchronous
Memory Type: Volatile
Memory Size: 9Mb (512K x 18)
Access Time: 12 ns
Voltage - Supply: 2.4V ~ 2.6V
Supplier Device Package: 208-CABGA (15x15)
Temperature Range - Operating: -40°C ~ 85°C
Case / Package: 208-LFBGA
Memory Format: SRAM
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
ECCN: 3A991B2A
Fake Threat In the Open Market: 78
MSL Level: 4 (72 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0041
Other Part Number: IDT70T633S12BFI,IDT70T633S12BFI-ND
Base Product Number: 70T633
RoHS Status: RoHS non-compliant

Buy Now Datasheet
Memory IC and Storage Component - 774-70T633S12BFI - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-70T633S12BFI
Memory IC and Storage Component 774-70T633S12BFI
IC SRAM 9MBIT PARALLEL 208CABGA Product overview: 70T633S12BFI from Renesas Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-70T633S12BFI can be used for catalog matching and distributor lookup.

IC SRAM 9MBIT PARALLEL 208CABGA Product overview: 70T633S12BFI from Renesas Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-70T633S12BFI can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - 70T633S12BFI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
70T633S12BFI
Integrated Circuits (ICs) - Memory - Memory 70T633S12BFI
IC SRAM 9MBIT PARALLEL 208CABGA

IC SRAM 9MBIT PARALLEL 208CABGA

Supplier's Site
IC SRAM 9MBIT PARALLEL 208CABGA

IC SRAM 9MBIT PARALLEL 208CABGA

Supplier's Site Datasheet
Memory - 70T633S12BFI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Dual Port, Asynchronous Memory IC 9Mbit Parallel 12 ns 208-CABGA (15x15)

SRAM - Dual Port, Asynchronous Memory IC 9Mbit Parallel 12 ns 208-CABGA (15x15)

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 70T633S12BFI-ND 1317186-70T633S12BFI 774-70T633S12BFI 70T633S12BFI 70T633S12BFI 70T633S12BFI
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory IC and Storage Component Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip Volatile; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 9000 kbits 9000 kbits 9000 kbits 9000 kbits
Package Type 208-LFBGA BGA; 208-LFBGA BGA; Tray BGA; 208-LFBGA
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