Renesas Electronics Corporation Memory 70T633S10BCGI

Description
SRAM - Dual Port, Asynchronous Memory IC 9Mb (512K x 18) Parallel 10ns 256-CABGA (17x17)
Request a Quote Datasheet
Description
SRAM - Dual Port, Asynchronous Memory IC 9Mb (512K x 18) Parallel 10ns 256-CABGA (17x17)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 70T633S10BCGI-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Dual Port, Asynchronous Memory IC 9Mb (512K x 18) Parallel 10ns 256-CABGA (17x17)

SRAM - Dual Port, Asynchronous Memory IC 9Mb (512K x 18) Parallel 10ns 256-CABGA (17x17)

Buy Now Datasheet
IC SRAM 9MBIT PARALLEL 256CABGA

IC SRAM 9MBIT PARALLEL 256CABGA

Supplier's Site Datasheet
Memory - 70T633S10BCGI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Dual Port, Asynchronous Memory IC 9Mbit Parallel 10 ns 256-CABGA (17x17)

SRAM - Dual Port, Asynchronous Memory IC 9Mbit Parallel 10 ns 256-CABGA (17x17)

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
70T633S10BCGI
Integrated Circuits (ICs) - Memory - Memory 70T633S10BCGI
IC SRAM 9MBIT PARALLEL 256CABGA

IC SRAM 9MBIT PARALLEL 256CABGA

Supplier's Site

Technical Specifications

  DigiKey Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 70T633S10BCGI-ND 70T633S10BCGI 70T633S10BCGI 70T633S10BCGI
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 9000 kbits 9000 kbits 9000 kbits 9000 kbits
Package Type 256-LBGA BGA; 256-LBGA
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 71016S20YGI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 ns
Density 1000 kbits
View Details
Controllers - BQ2204ASN-N - Quarktwin Technology Ltd.
Specs
Operating Temperature -40 to 85 C (-40 to 185 F)
Package Type SOIC; 16-SOIC (0.154\", 3.90mm Width)
Supply Voltage 4.5V ~ 5.5V
View Details
Memory - AS8ERLC128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 250 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory - 1882523 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Pins 8
View Details