Renesas Electronics Corporation Memory 70T633S10BCGI

Description
SRAM - Dual Port, Asynchronous Memory IC 9Mb (512K x 18) Parallel 10ns 256-CABGA (17x17)
Request a Quote Datasheet
Description
SRAM - Dual Port, Asynchronous Memory IC 9Mb (512K x 18) Parallel 10ns 256-CABGA (17x17)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 70T633S10BCGI-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Dual Port, Asynchronous Memory IC 9Mb (512K x 18) Parallel 10ns 256-CABGA (17x17)

SRAM - Dual Port, Asynchronous Memory IC 9Mb (512K x 18) Parallel 10ns 256-CABGA (17x17)

Buy Now Datasheet
IC SRAM 9MBIT PARALLEL 256CABGA

IC SRAM 9MBIT PARALLEL 256CABGA

Supplier's Site Datasheet
Memory - 70T633S10BCGI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Dual Port, Asynchronous Memory IC 9Mbit Parallel 10 ns 256-CABGA (17x17)

SRAM - Dual Port, Asynchronous Memory IC 9Mbit Parallel 10 ns 256-CABGA (17x17)

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
70T633S10BCGI
Integrated Circuits (ICs) - Memory - Memory 70T633S10BCGI
IC SRAM 9MBIT PARALLEL 256CABGA

IC SRAM 9MBIT PARALLEL 256CABGA

Supplier's Site

Technical Specifications

  DigiKey Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 70T633S10BCGI-ND 70T633S10BCGI 70T633S10BCGI 70T633S10BCGI
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 9000 kbits 9000 kbits 9000 kbits 9000 kbits
Package Type 256-LBGA BGA; 256-LBGA
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