Renesas Electronics Corporation Memory 70T633S10BC

Description
SRAM - Dual Port, Asynchronous Memory IC 9Mb (512K x 18) Parallel 10ns 256-CABGA (17x17)
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Description
SRAM - Dual Port, Asynchronous Memory IC 9Mb (512K x 18) Parallel 10ns 256-CABGA (17x17)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 70T633S10BC-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Dual Port, Asynchronous Memory IC 9Mb (512K x 18) Parallel 10ns 256-CABGA (17x17)

SRAM - Dual Port, Asynchronous Memory IC 9Mb (512K x 18) Parallel 10ns 256-CABGA (17x17)

Buy Now Datasheet
Memory - 70T633S10BC - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Dual Port, Asynchronous Memory IC 9Mbit Parallel 10 ns 256-CABGA (17x17)

SRAM - Dual Port, Asynchronous Memory IC 9Mbit Parallel 10 ns 256-CABGA (17x17)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 70T633S10BC - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
70T633S10BC
Integrated Circuits (ICs) - Memory - Memory 70T633S10BC
IC SRAM 9MBIT PARALLEL 256CABGA

IC SRAM 9MBIT PARALLEL 256CABGA

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 70T633S10BC-ND 70T633S10BC 70T633S10BC
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 9000 kbits 9000 kbits 9000 kbits
Package Type 256-LBGA BGA; 256-LBGA
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