Renesas Electronics Corporation Memory 70T633S10BC

Description
SRAM - Dual Port, Asynchronous Memory IC 9Mb (512K x 18) Parallel 10ns 256-CABGA (17x17)
Request a Quote Datasheet
Description
SRAM - Dual Port, Asynchronous Memory IC 9Mb (512K x 18) Parallel 10ns 256-CABGA (17x17)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 70T633S10BC-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Dual Port, Asynchronous Memory IC 9Mb (512K x 18) Parallel 10ns 256-CABGA (17x17)

SRAM - Dual Port, Asynchronous Memory IC 9Mb (512K x 18) Parallel 10ns 256-CABGA (17x17)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 70T633S10BC - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
70T633S10BC
Integrated Circuits (ICs) - Memory - Memory 70T633S10BC
IC SRAM 9MBIT PARALLEL 256CABGA

IC SRAM 9MBIT PARALLEL 256CABGA

Supplier's Site
Memory - 70T633S10BC - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Dual Port, Asynchronous Memory IC 9Mbit Parallel 10 ns 256-CABGA (17x17)

SRAM - Dual Port, Asynchronous Memory IC 9Mbit Parallel 10 ns 256-CABGA (17x17)

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 70T633S10BC-ND 70T633S10BC 70T633S10BC
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 9000 kbits 9000 kbits 9000 kbits
Package Type 256-LBGA BGA; 256-LBGA
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