Renesas Electronics Corporation Memory 70T631S12BCI

Description
SRAM - Dual Port, Asynchronous Memory IC 4.5Mb (256K x 18) Parallel 12ns 256-CABGA (17x17)
Request a Quote Datasheet
Description
SRAM - Dual Port, Asynchronous Memory IC 4.5Mb (256K x 18) Parallel 12ns 256-CABGA (17x17)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 70T631S12BCI-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Dual Port, Asynchronous Memory IC 4.5Mb (256K x 18) Parallel 12ns 256-CABGA (17x17)

SRAM - Dual Port, Asynchronous Memory IC 4.5Mb (256K x 18) Parallel 12ns 256-CABGA (17x17)

Buy Now Datasheet
Memory - 70T631S12BCI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Dual Port, Asynchronous Memory IC 4.5Mbit Parallel 12 ns 256-CABGA (17x17)

SRAM - Dual Port, Asynchronous Memory IC 4.5Mbit Parallel 12 ns 256-CABGA (17x17)

Buy Now Datasheet
IC SRAM 4.5MBIT PAR 256CABGA

IC SRAM 4.5MBIT PAR 256CABGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - 70T631S12BCI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
70T631S12BCI
Integrated Circuits (ICs) - Memory - Memory 70T631S12BCI
IC SRAM 4.5MBIT PAR 256CABGA

IC SRAM 4.5MBIT PAR 256CABGA

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 70T631S12BCI-ND 70T631S12BCI 70T631S12BCI 70T631S12BCI
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 4500 kbits 4500 kbits 4500 kbits 4500 kbits
Package Type 256-LBGA BGA; 256-LBGA BGA
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882540 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Pins 8
View Details
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 3500 ns
Density 1 kbits
View Details
 - LP3913SQ-AA/NOPB - Rochester Electronics
Texas Instruments
Specs
Memory Category Flash
Package Type WQFN48
View Details
Memory - AS5C4009 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 55 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details