Renesas Electronics Corporation Memory 70T3519S166DRI

Description
SRAM - Dual Port, Synchronous Memory IC 9Mbit Parallel 166 MHz 3.6 ns 208-PQFP (28x28)
Datasheet
Description
SRAM - Dual Port, Synchronous Memory IC 9Mbit Parallel 166 MHz 3.6 ns 208-PQFP (28x28)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 70T3519S166DRI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Dual Port, Synchronous Memory IC 9Mbit Parallel 166 MHz 3.6 ns 208-PQFP (28x28)

SRAM - Dual Port, Synchronous Memory IC 9Mbit Parallel 166 MHz 3.6 ns 208-PQFP (28x28)

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IC SRAM 9MBIT PARALLEL 208PQFP

IC SRAM 9MBIT PARALLEL 208PQFP

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - 70T3519S166DRI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
70T3519S166DRI
Integrated Circuits (ICs) - Memory 70T3519S166DRI
IC SRAM 9MBIT PARALLEL 208PQFP

IC SRAM 9MBIT PARALLEL 208PQFP

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 70T3519S166DRI 70T3519S166DRI 70T3519S166DRI
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 3.6 ns 3.6 ns 3.6 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 9000 kbits 9000 kbits 9000 kbits
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