Renesas Electronics Corporation Integrated Circuits (ICs) - Memory 70T3519S166DRI

Description
IC SRAM 9MBIT PARALLEL 208PQFP
Datasheet
Description
IC SRAM 9MBIT PARALLEL 208PQFP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - 70T3519S166DRI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
70T3519S166DRI
Integrated Circuits (ICs) - Memory 70T3519S166DRI
IC SRAM 9MBIT PARALLEL 208PQFP

IC SRAM 9MBIT PARALLEL 208PQFP

Supplier's Site
IC SRAM 9MBIT PARALLEL 208PQFP

IC SRAM 9MBIT PARALLEL 208PQFP

Supplier's Site Datasheet
Memory - 70T3519S166DRI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Dual Port, Synchronous Memory IC 9Mbit Parallel 166 MHz 3.6 ns 208-PQFP (28x28)

SRAM - Dual Port, Synchronous Memory IC 9Mbit Parallel 166 MHz 3.6 ns 208-PQFP (28x28)

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Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 70T3519S166DRI 70T3519S166DRI 70T3519S166DRI
Product Name Integrated Circuits (ICs) - Memory Memory Memory
Memory Category Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Data Rate 166 MHz
Access Time 3.6 ns 3.6 ns 3.6 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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