Renesas Electronics Corporation Memory 70T3519S166DRI

Description
IC SRAM 9MBIT PARALLEL 208PQFP
Datasheet
Description
IC SRAM 9MBIT PARALLEL 208PQFP
Datasheet

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IC SRAM 9MBIT PARALLEL 208PQFP

IC SRAM 9MBIT PARALLEL 208PQFP

Supplier's Site Datasheet
Memory - 70T3519S166DRI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Dual Port, Synchronous Memory IC 9Mbit Parallel 166 MHz 3.6 ns 208-PQFP (28x28)

SRAM - Dual Port, Synchronous Memory IC 9Mbit Parallel 166 MHz 3.6 ns 208-PQFP (28x28)

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Integrated Circuits (ICs) - Memory - 70T3519S166DRI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
70T3519S166DRI
Integrated Circuits (ICs) - Memory 70T3519S166DRI
IC SRAM 9MBIT PARALLEL 208PQFP

IC SRAM 9MBIT PARALLEL 208PQFP

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 70T3519S166DRI 70T3519S166DRI 70T3519S166DRI
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 3.6 ns 3.6 ns 3.6 ns
Density 9000 kbits 9000 kbits 9000 kbits
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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