Renesas Electronics Corporation Memory 7025S30J

Description
SRAM - Dual Port, Asynchronous Memory IC 128Kbit Parallel 30 ns 84-PLCC (29.31x29.31)
Description
SRAM - Dual Port, Asynchronous Memory IC 128Kbit Parallel 30 ns 84-PLCC (29.31x29.31)
Datasheet
Datasheet Summary
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The 7025S30J is a high-speed 8K x 16 dual-ported static RAM designed for asynchronous access, allowing simultaneous reads from the same memory location. It operates with a maximum access time of 30 ns and is suitable for commercial applications. The device features low power consumption, with typical active power at 750 mW and standby power at 5 mW. It supports separate upper-byte and lower-byte control for multiplexed bus compatibility and includes on-chip port arbitration logic for efficient data management. The memory can be configured as a stand-alone 128K-bit dual-port RAM or combined in master/slave configurations for wider data bus applications. It is available in multiple package types, including 84-pin PGA and PLCC, and is compliant with military specifications for high reliability in demanding environments. The device also supports battery backup operation with 2V data retention, making it suitable for applications requiring low power and high reliability.

Datasheet Summary
Powered by GS/AI

The 7025S30J is a high-speed 8K x 16 dual-ported static RAM designed for asynchronous access, allowing simultaneous reads from the same memory location. It operates with a maximum access time of 30 ns and is suitable for commercial applications. The device features low power consumption, with typical active power at 750 mW and standby power at 5 mW. It supports separate upper-byte and lower-byte control for multiplexed bus compatibility and includes on-chip port arbitration logic for efficient data management. The memory can be configured as a stand-alone 128K-bit dual-port RAM or combined in master/slave configurations for wider data bus applications. It is available in multiple package types, including 84-pin PGA and PLCC, and is compliant with military specifications for high reliability in demanding environments. The device also supports battery backup operation with 2V data retention, making it suitable for applications requiring low power and high reliability.

Suppliers

Company
Product
Description
Supplier Links
Memory - 7025S30J - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
7025S30J
Memory 7025S30J
SRAM - Dual Port, Asynchronous Memory IC 128Kbit Parallel 30 ns 84-PLCC (29.31x29.31)

SRAM - Dual Port, Asynchronous Memory IC 128Kbit Parallel 30 ns 84-PLCC (29.31x29.31)

Buy Now Datasheet
Memory 7025S30J
IC SRAM 128KBIT PARALLEL 84PLCC

IC SRAM 128KBIT PARALLEL 84PLCC

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number 7025S30J 7025S30J
Product Name Memory Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip
Access Time 30 ns 30 ns
Operating Temperature 0 to 70 C (32 to 158 F)
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