Renesas Electronics Corporation Integrated Circuits (ICs) - Memory - Memory 6116SA35TDB

Description
IC SRAM 16KBIT PARALLEL 24CDIP
Datasheet
Description
IC SRAM 16KBIT PARALLEL 24CDIP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Futian, China
Integrated Circuits (ICs) - Memory - Memory
6116SA35TDB
Integrated Circuits (ICs) - Memory - Memory 6116SA35TDB
IC SRAM 16KBIT PARALLEL 24CDIP

IC SRAM 16KBIT PARALLEL 24CDIP

Supplier's Site
Memory - 6116SA35TDB - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 16Kbit Parallel 35 ns 24-CDIP

SRAM - Asynchronous Memory IC 16Kbit Parallel 35 ns 24-CDIP

Buy Now Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number 6116SA35TDB 6116SA35TDB
Product Name Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Volatile; SRAM Chip SRAM; SRAM Chip
Cycle Time 35 ns
Density 16 kbits 16 kbits
Supply Voltage Through Hole 4.5V ~ 5.5V
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