Renesas Electronics Corporation Memory 6116SA35TDB

Description
SRAM - Asynchronous Memory IC 16Kbit Parallel 35 ns 24-CDIP
Datasheet
Description
SRAM - Asynchronous Memory IC 16Kbit Parallel 35 ns 24-CDIP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 6116SA35TDB - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 16Kbit Parallel 35 ns 24-CDIP

SRAM - Asynchronous Memory IC 16Kbit Parallel 35 ns 24-CDIP

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
6116SA35TDB
Integrated Circuits (ICs) - Memory - Memory 6116SA35TDB
IC SRAM 16KBIT PARALLEL 24CDIP

IC SRAM 16KBIT PARALLEL 24CDIP

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number 6116SA35TDB 6116SA35TDB
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 35 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 16 kbits 16 kbits
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