Renesas Electronics Corporation Memory 5962-3829409MXA

Description
SRAM - Synchronous Memory IC 64Kb (8K x 8) Parallel 55ns 28-CDIP
Request a Quote
Description
SRAM - Synchronous Memory IC 64Kb (8K x 8) Parallel 55ns 28-CDIP
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The Quarktwin Technology Ltd. Memory part number 5962-3829409MXA is a high-speed CMOS static RAM with a capacity of 64K bits organized as 8K x 8 bits. It features address access times of 20 to 25 ns for commercial and industrial grades, and up to 100 ns for military grades. The device operates from a single 5V supply and is designed for low power consumption, including a standby mode that activates when chip select signals are deactivated. The low-power version supports battery backup data retention at supply levels as low as 2V. This memory is available in multiple package types, including 28-pin CERDIP, 28-pin plastic DIP, and 300 mil SOJ. It is compliant with military standards (MIL-STD-883, Class B), making it suitable for applications requiring high reliability and performance under extreme temperature conditions ranging from -55¬8C to +125¬8C for military versions, and -40¬8C to +85¬8C for industrial versions. The inputs and outputs are TTL-compatible, facilitating integration into various systems.

Datasheet Summary
Powered by GS/AI

The Quarktwin Technology Ltd. Memory part number 5962-3829409MXA is a high-speed CMOS static RAM with a capacity of 64K bits organized as 8K x 8 bits. It features address access times of 20 to 25 ns for commercial and industrial grades, and up to 100 ns for military grades. The device operates from a single 5V supply and is designed for low power consumption, including a standby mode that activates when chip select signals are deactivated. The low-power version supports battery backup data retention at supply levels as low as 2V. This memory is available in multiple package types, including 28-pin CERDIP, 28-pin plastic DIP, and 300 mil SOJ. It is compliant with military standards (MIL-STD-883, Class B), making it suitable for applications requiring high reliability and performance under extreme temperature conditions ranging from -55¬8C to +125¬8C for military versions, and -40¬8C to +85¬8C for industrial versions. The inputs and outputs are TTL-compatible, facilitating integration into various systems.

Suppliers

Company
Product
Description
Supplier Links
Memory - 800-5962-3829409MXA-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Synchronous Memory IC 64Kb (8K x 8) Parallel 55ns 28-CDIP

SRAM - Synchronous Memory IC 64Kb (8K x 8) Parallel 55ns 28-CDIP

Buy Now Datasheet
Memory - 5962-3829409MXA - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous Memory IC 64Kbit Parallel 55 ns 28-CDIP

SRAM - Synchronous Memory IC 64Kbit Parallel 55 ns 28-CDIP

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
5962-3829409MXA
Integrated Circuits (ICs) - Memory - Memory 5962-3829409MXA
IC SRAM 64KBIT PARALLEL 28CDIP

IC SRAM 64KBIT PARALLEL 28CDIP

Supplier's Site
IC SRAM 64KBIT PARALLEL 28CDIP

IC SRAM 64KBIT PARALLEL 28CDIP

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 800-5962-3829409MXA-ND 5962-3829409MXA 5962-3829409MXA 5962-3829409MXA
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F) -55 to 125 C (-67 to 257 F)
Package Type "28-CDIP (0.600"", 15.24mm)" DIP; 28-CDIP (0.600\", 15.24mm)
Supply Voltage 4.5V ~ 5.5V 4.5V ~ 5.5V Through Hole
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882794P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Package Type VFBGA
Pins 63
View Details
Memory - MYXX28HC256 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 70 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 273503-002 09 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers