Renesas Electronics Corporation Single FETs, MOSFETs 2SK3812(0)-ZP-E1-AY

The 2SK3812 is an N-channel power MOSFET designed for high-current switching applications in a TO-263 (MP-25ZP) package. It has a drain-to-source voltage rating of 60 V, a continuous drain current of ±110 A, and a maximum on-state resistance of 2.8 mΩ at VGS = 10 V and ID = 55 A. The device supports a peak pulse current of ±440 A and a total power dissipation of 213 W at TC = 25°C. It meets the Standard quality grade per Renesas Electronics classification and is rated for a channel temperature up to 150°C. The device includes an integrated body diode with a forward voltage of up to 1.5 V at 110 A and a reverse recovery time of 53 ns. The TO-263 package dimensions include a body width of 10.0 mm and lead spacing of 2.54 mm.