Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3811-ZP-E1-AY 2SK3811-ZP-E1-AY

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 110283-2SK3811-ZP-E1 -AY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta), 213W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-263 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 110A (Tc) Max Gate Charge: 260nC @ 10V Max Input Capacitance: 17700pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.8 mOhm @ 55A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 110283-2SK3811-ZP-E1 -AY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta), 213W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-263 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 110A (Tc) Max Gate Charge: 260nC @ 10V Max Input Capacitance: 17700pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.8 mOhm @ 55A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3811-ZP-E1-AY - 110283-2SK3811-ZP-E1-AY - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3811-ZP-E1-AY
110283-2SK3811-ZP-E1-AY
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3811-ZP-E1-AY 110283-2SK3811-ZP-E1-AY
Manufacturer: Renesas Electronics America Win Source Part Number: 110283-2SK3811-ZP-E1 -AY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta), 213W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-263 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 110A (Tc) Max Gate Charge: 260nC @ 10V Max Input Capacitance: 17700pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.8 mOhm @ 55A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 110283-2SK3811-ZP-E1-AY
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta), 213W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-263
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 110A (Tc)
Max Gate Charge: 260nC @ 10V
Max Input Capacitance: 17700pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.8 mOhm @ 55A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
40V 110A MOSFET Transistor
278-2SK3811-ZP-E1-AY
40V 110A MOSFET Transistor 278-2SK3811-ZP-E1-AY
MOSFET N-CH 40V 110A TO263 Product overview: 2SK3811-ZP-E1-AY from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 110A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 110A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2SK3811-ZP-E1-AY can be used for catalog matching and distributor lookup.

MOSFET N-CH 40V 110A TO263 Product overview: 2SK3811-ZP-E1-AY from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 110A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 110A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2SK3811-ZP-E1-AY can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 2SK3811-ZP-E1-AYTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2SK3811-ZP-E1-AYTR-ND
Single FETs, MOSFETs 2SK3811-ZP-E1-AYTR-ND
N-Channel 40V 110A (Tc) 1.5W (Ta), 213W (Tc) Surface Mount TO-263

N-Channel 40V 110A (Tc) 1.5W (Ta), 213W (Tc) Surface Mount TO-263

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2SK3811-ZP-E1-AY - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2SK3811-ZP-E1-AY
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2SK3811-ZP-E1-AY
MOSFET N-CH 40V 110A TO263

MOSFET N-CH 40V 110A TO263

Supplier's Site
MOSFET MOSFET

MOSFET MOSFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 110283-2SK3811-ZP-E1-AY 278-2SK3811-ZP-E1-AY 2SK3811-ZP-E1-AYTR-ND 2SK3811-ZP-E1-AY 2SK3811-ZP-E1-AY
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3811-ZP-E1-AY 40V 110A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 40 volts
PD 1500 to 213000 milliwatts 1500 milliwatts
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