Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3484 2SK3484

Manufacturer: Renesas Electronics America
Win Source Part Number: 8581-2SK3484
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Ta), 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-251 (MP-3)
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 16A (Tc)
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 900pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 125 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance

MOSFET N-CH 100V MP-3/TO-251 Product overview: 2SK3484 from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-2SK3484 can be used for catalog matching and distributor lookup.