Renesas Electronics Corporation Single FETs, MOSFETs 2SK3483-AZ

Description
N-Channel 100V 28A (Ta) 1W (Ta), 40W (Tc) Through Hole TO-251
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Description
N-Channel 100V 28A (Ta) 1W (Ta), 40W (Tc) Through Hole TO-251
Request a Quote Datasheet

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Single FETs, MOSFETs - 2SK3483-AZ-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2SK3483-AZ-ND
Single FETs, MOSFETs 2SK3483-AZ-ND
N-Channel 100V 28A (Ta) 1W (Ta), 40W (Tc) Through Hole TO-251

N-Channel 100V 28A (Ta) 1W (Ta), 40W (Tc) Through Hole TO-251

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3483-AZ - 1004734-2SK3483-AZ - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3483-AZ
1004734-2SK3483-AZ
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3483-AZ 1004734-2SK3483-AZ
Manufacturer: Renesas Electronics America Win Source Part Number: 1004734-2SK3483-AZ Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Ta), 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-251 (MP-3) Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 28A (Ta) Max Gate Charge: 49nC @ 10V Max Input Capacitance: 2300pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 52 mOhm @ 14A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 1004734-2SK3483-AZ
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Ta), 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-251 (MP-3)
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 28A (Ta)
Max Gate Charge: 49nC @ 10V
Max Input Capacitance: 2300pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 52 mOhm @ 14A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2SK3483-AZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2SK3483-AZ
2SK3483-AZ - SWITCHING N-CHANNEL

2SK3483-AZ - SWITCHING N-CHANNEL

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 2SK3483-AZ-ND 1004734-2SK3483-AZ 2SK3483-AZ
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3483-AZ Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-251-3 Short Leads, IPAK, TO-251AA SOT3; TO-251 (MP-3) TO-251-3 Short Leads, IPak, TO-251AA
V(BR)DSS 100 volts
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