Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3431-Z-E1 2SK3431-Z-E1

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 8528-2SK3431-Z-E1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta), 100W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 83A (Tc) Max Gate Charge: 110nC @ 10V Max Input Capacitance: 6100pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.6 mOhm @ 42A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3431-Z-E1 - 8528-2SK3431-Z-E1 - Win Source Electronics
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 8528-2SK3431-Z-E1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta), 100W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 83A (Tc) Max Gate Charge: 110nC @ 10V Max Input Capacitance: 6100pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.6 mOhm @ 42A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3431-Z-E1 - 8528-2SK3431-Z-E1 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3431-Z-E1
8528-2SK3431-Z-E1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3431-Z-E1 8528-2SK3431-Z-E1
Manufacturer: Renesas Electronics America Win Source Part Number: 8528-2SK3431-Z-E1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta), 100W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 83A (Tc) Max Gate Charge: 110nC @ 10V Max Input Capacitance: 6100pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.6 mOhm @ 42A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 8528-2SK3431-Z-E1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta), 100W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 83A (Tc)
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 6100pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.6 mOhm @ 42A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 8528-2SK3431-Z-E1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3431-Z-E1
Polarity N-Channel; N-Channel
V(BR)DSS 40 volts
PD 1500 to 100000 milliwatts
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