Renesas Electronics Corporation Single FETs, MOSFETs 2SK3431-Z-E1-AZ

Description
N-Channel 40V 83A (Tc) 1.5W (Ta), 100W (Tc) Through Hole TO-220AB
  • Single FETs, MOSFETs - 2SK3431-Z-E1-AZ-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3431-Z-E1-AZ - 119356-2SK3431-Z-E1-AZ - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2SK3431-Z-E1-AZ - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
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Description
N-Channel 40V 83A (Tc) 1.5W (Ta), 100W (Tc) Through Hole TO-220AB
Request a Quote Datasheet

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Single FETs, MOSFETs - 2SK3431-Z-E1-AZ-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2SK3431-Z-E1-AZ-ND
Single FETs, MOSFETs 2SK3431-Z-E1-AZ-ND
N-Channel 40V 83A (Tc) 1.5W (Ta), 100W (Tc) Through Hole TO-220AB

N-Channel 40V 83A (Tc) 1.5W (Ta), 100W (Tc) Through Hole TO-220AB

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3431-Z-E1-AZ - 119356-2SK3431-Z-E1-AZ - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3431-Z-E1-AZ
119356-2SK3431-Z-E1-AZ
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3431-Z-E1-AZ 119356-2SK3431-Z-E1-AZ
Manufacturer: Renesas Electronics America Win Source Part Number: 119356-2SK3431-Z-E1- AZ Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta), 100W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 83A (Tc) Max Gate Charge: 110nC @ 10V Max Input Capacitance: 6100pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.6 mOhm @ 42A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 119356-2SK3431-Z-E1-AZ
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta), 100W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 83A (Tc)
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 6100pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.6 mOhm @ 42A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2SK3431-Z-E1-AZ - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2SK3431-Z-E1-AZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2SK3431-Z-E1-AZ
MOSFET N-CH 40V 83A TO220AB

MOSFET N-CH 40V 83A TO220AB

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Technical Specifications

  DigiKey Win Source Electronics Acme Chip Technology Co., Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 2SK3431-Z-E1-AZ-ND 119356-2SK3431-Z-E1-AZ 2SK3431-Z-E1-AZ
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3431-Z-E1-AZ Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB 6100 pF @ 10 V
V(BR)DSS 40 volts
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