Renesas Electronics Corporation Single FETs, MOSFETs 2SK3430-Z-E1-AZ

Description
N-Channel 40V 80A (Tc) 1.5W (Ta), 84W (Tc) Through Hole TO-220AB
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Description
N-Channel 40V 80A (Tc) 1.5W (Ta), 84W (Tc) Through Hole TO-220AB
Request a Quote Datasheet

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Single FETs, MOSFETs - 2SK3430-Z-E1-AZ-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2SK3430-Z-E1-AZ-ND
Single FETs, MOSFETs 2SK3430-Z-E1-AZ-ND
N-Channel 40V 80A (Tc) 1.5W (Ta), 84W (Tc) Through Hole TO-220AB

N-Channel 40V 80A (Tc) 1.5W (Ta), 84W (Tc) Through Hole TO-220AB

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3430-Z-E1-AZ - 762990-2SK3430-Z-E1-AZ - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3430-Z-E1-AZ
762990-2SK3430-Z-E1-AZ
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3430-Z-E1-AZ 762990-2SK3430-Z-E1-AZ
Manufacturer: Renesas Electronics America Win Source Part Number: 762990-2SK3430-Z-E1- AZ Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-220-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Family Name: 2SK3430-Z-E1-AZ Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Manufacturer Package: TO-220AB Channel Type Type: N Drain Source Voltage: 40V Gate Charge (Qg) (Maximum) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2800pF @ 10V Vgs (Maximum): ±20V Power Dissipation (Maximum): 1.5W (Ta), 84W (Tc) Rds On (Maximum) @ Id, Vgs: 7.3 mOhm @ 40A, 10V Introduction Date: January 01, 2000 ECCN: EAR99 Estimated EOL Date: Obsolete Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited

Manufacturer: Renesas Electronics America
Win Source Part Number: 762990-2SK3430-Z-E1-AZ
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Family Name: 2SK3430-Z-E1-AZ
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Manufacturer Package: TO-220AB
Channel Type Type: N
Drain Source Voltage: 40V
Gate Charge (Qg) (Maximum) @ Vgs: 50nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2800pF @ 10V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 1.5W (Ta), 84W (Tc)
Rds On (Maximum) @ Id, Vgs: 7.3 mOhm @ 40A, 10V
Introduction Date: January 01, 2000
ECCN: EAR99
Estimated EOL Date: Obsolete
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2SK3430-Z-E1-AZ - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2SK3430-Z-E1-AZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2SK3430-Z-E1-AZ
MOSFET N-CH 40V 80A TO220AB

MOSFET N-CH 40V 80A TO220AB

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Technical Specifications

  DigiKey Win Source Electronics Acme Chip Technology Co., Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 2SK3430-Z-E1-AZ-ND 762990-2SK3430-Z-E1-AZ 2SK3430-Z-E1-AZ
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3430-Z-E1-AZ Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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