Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2315TYTR-E 2SK2315TYTR-E

Manufacturer: Renesas Electronics America
Win Source Part Number: 7816-2SK2315TYTR-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 3V, 4V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: UPAK
Dimension: TO-243AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 2A (Ta)
Max Input Capacitance: 173pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 450 mOhm @ 1A, 4V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

MOSFET N-CH 60V 2A UPAK Product overview: 2SK2315TYTR-E from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2SK2315TYTR-E can be used for catalog matching and distributor lookup.

N-Channel 60V 2A (Ta) 1W (Ta) Surface Mount UPAK