Renesas Electronics Corporation Single FETs, MOSFETs 2SK2315TYTR-E

Description
N-Channel 60V 2A (Ta) 1W (Ta) Surface Mount UPAK
Request a Quote Datasheet
Description
N-Channel 60V 2A (Ta) 1W (Ta) Surface Mount UPAK
Request a Quote Datasheet

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Description
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Single FETs, MOSFETs - 2SK2315TYTR-E-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2SK2315TYTR-E-ND
Single FETs, MOSFETs 2SK2315TYTR-E-ND
N-Channel 60V 2A (Ta) 1W (Ta) Surface Mount UPAK

N-Channel 60V 2A (Ta) 1W (Ta) Surface Mount UPAK

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2315TYTR-E - 7816-2SK2315TYTR-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2315TYTR-E
7816-2SK2315TYTR-E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2315TYTR-E 7816-2SK2315TYTR-E
Manufacturer: Renesas Electronics America Win Source Part Number: 7816-2SK2315TYTR-E Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 3V, 4V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: UPAK Dimension: TO-243AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 2A (Ta) Max Input Capacitance: 173pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 450 mOhm @ 1A, 4V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 7816-2SK2315TYTR-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 3V, 4V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: UPAK
Dimension: TO-243AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 2A (Ta)
Max Input Capacitance: 173pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 450 mOhm @ 1A, 4V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

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Sheung Wan, Hong Kong
MOSFET MOSFET - Pb Free

MOSFET MOSFET - Pb Free

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2SK2315TYTR-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2SK2315TYTR-E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2SK2315TYTR-E
MOSFET N-CH 60V 2A UPAK

MOSFET N-CH 60V 2A UPAK

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Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 2SK2315TYTR-E-ND 7816-2SK2315TYTR-E 2SK2315TYTR-E 2SK2315TYTR-E
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2315TYTR-E MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-243AA SOT3; UPAK TO-243AA
V(BR)DSS 60 volts
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