Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2315 2SK2315

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 197587-2SK2315 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 3V, 4V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: UPAK Dimension: TO-243AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 2A (Ta) Max Input Capacitance: 173pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 450 mOhm @ 1A, 4V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2315 - 197587-2SK2315 - Win Source Electronics
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 197587-2SK2315 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 3V, 4V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: UPAK Dimension: TO-243AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 2A (Ta) Max Input Capacitance: 173pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 450 mOhm @ 1A, 4V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2315 - 197587-2SK2315 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2315
197587-2SK2315
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2315 197587-2SK2315
Manufacturer: Renesas Electronics America Win Source Part Number: 197587-2SK2315 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 3V, 4V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: UPAK Dimension: TO-243AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 2A (Ta) Max Input Capacitance: 173pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 450 mOhm @ 1A, 4V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 197587-2SK2315
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 3V, 4V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: UPAK
Dimension: TO-243AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 2A (Ta)
Max Input Capacitance: 173pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 450 mOhm @ 1A, 4V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 197587-2SK2315
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2315
Polarity N-Channel; N-Channel
V(BR)DSS 60 volts
PD 1000 milliwatts
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