Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2225 2SK2225

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 075592-2SK2225 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 15V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-3PFM Dimension: TO-3PFM, SC-93-3 Drain-Source Breakdown Voltage: 1500V (1.5kV) Continuous Drain Current at 25°C: 2A (Ta) Max Input Capacitance: 984.7pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 12 Ohm @ 1A, 15V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 075592-2SK2225 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 15V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-3PFM Dimension: TO-3PFM, SC-93-3 Drain-Source Breakdown Voltage: 1500V (1.5kV) Continuous Drain Current at 25°C: 2A (Ta) Max Input Capacitance: 984.7pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 12 Ohm @ 1A, 15V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited
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Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2225 - 075592-2SK2225 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2225
075592-2SK2225
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2225 075592-2SK2225
Manufacturer: Renesas Electronics America Win Source Part Number: 075592-2SK2225 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 15V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-3PFM Dimension: TO-3PFM, SC-93-3 Drain-Source Breakdown Voltage: 1500V (1.5kV) Continuous Drain Current at 25°C: 2A (Ta) Max Input Capacitance: 984.7pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 12 Ohm @ 1A, 15V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited

Manufacturer: Renesas Electronics America
Win Source Part Number: 075592-2SK2225
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 15V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-3PFM
Dimension: TO-3PFM, SC-93-3
Drain-Source Breakdown Voltage: 1500V (1.5kV)
Continuous Drain Current at 25°C: 2A (Ta)
Max Input Capacitance: 984.7pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12 Ohm @ 1A, 15V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Transistor - 37814269 - Radwell International
Willingboro, NJ, United States
Transistor
37814269
Transistor 37814269
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 2A I(D), 1500V, 12OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-3PFM, 3 PIN, ROHS. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 2A I(D), 1500V, 12OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-3PFM, 3 PIN, ROHS. FREE 2 YEAR RADWELL WARRANTY

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Technical Specifications

  Win Source Electronics Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 075592-2SK2225 37814269
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2225 Transistor
Polarity N-Channel; N-Channel
V(BR)DSS 1500 volts
PD 50000 milliwatts
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