MOSFET N-CH 1500V 2A TO3PFM
Manufacturer: Renesas Electronics America
Win Source Part Number: 7779-2SK2225-E
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 50W (Tc)
Family Name: 2SK2225
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 15V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-3PFM
Dimension: TO-3PFM, SC-93-3
Drain-Source Breakdown Voltage: 1500V (1.5kV)
Continuous Drain Current at 25°C: 2A (Ta)
Max Input Capacitance: 984.7pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12 Ohm @ 1A, 15V
Alternative Parts (Cross-Reference): 2SK1413; STFW3N150; STW4N150; STFW4N150;
Introduction Date: March 19, 2001
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2022
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 1500V 2A TO3PFM
| ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 2SK2225-E | 7779-2SK2225-E | 2SK2225-E |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2225-E | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||
| V(BR)DSS | 1500 volts | 1500 volts | |
| IDSS | 2000 milliamps |
