Renesas Electronics Corporation 900V 6A MOSFET Transistor 2SK1859

Description
MOSFET N-CH 900V 6A TO-3P Product overview: 2SK1859 from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 6A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-2SK1859 can be used for catalog matching and distributor lookup.
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Description
MOSFET N-CH 900V 6A TO-3P Product overview: 2SK1859 from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 6A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-2SK1859 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore, Singapore
900V 6A MOSFET Transistor
285-2SK1859
900V 6A MOSFET Transistor 285-2SK1859
MOSFET N-CH 900V 6A TO-3P Product overview: 2SK1859 from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 6A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-2SK1859 can be used for catalog matching and distributor lookup.

MOSFET N-CH 900V 6A TO-3P Product overview: 2SK1859 from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 6A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-2SK1859 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1859 - 075587-2SK1859 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1859
075587-2SK1859
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1859 075587-2SK1859
Manufacturer: Renesas Electronics America Win Source Part Number: 075587-2SK1859 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-3P Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 6A (Ta) Max Input Capacitance: 980pF @ 10V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 3 Ohm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited

Manufacturer: Renesas Electronics America
Win Source Part Number: 075587-2SK1859
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-3P
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 6A (Ta)
Max Input Capacitance: 980pF @ 10V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 3 Ohm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Transistor - 32459256 - Radwell International
Willingboro, NJ, United States
Transistor
32459256
Transistor 32459256
TRANSISTOR, LOW ON RESISTANCE, HIGH SPEED SWITCHING, LOW DRIVE CURRENT. FREE 2 YEAR RADWELL WARRANTY

TRANSISTOR, LOW ON RESISTANCE, HIGH SPEED SWITCHING, LOW DRIVE CURRENT. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 285-2SK1859 075587-2SK1859 32459256
Product Name 900V 6A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1859 Transistor
Polarity N-Channel N-Channel; N-Channel
PD 60000 milliwatts 60000 milliwatts
TJ 150 C (302 F) 150 C (302 F)
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