Manufacturer: Renesas Electronics America
Win Source Part Number: 075587-2SK1859
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-3P
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 6A (Ta)
Max Input Capacitance: 980pF @ 10V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 3 Ohm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
TRANSISTOR, LOW ON RESISTANCE, HIGH SPEED SWITCHING, LOW DRIVE CURRENT. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | Radwell International | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 075587-2SK1859 | 32459256 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1859 | Transistor |
| Polarity | N-Channel; N-Channel | |
| V(BR)DSS | 900 volts | |
| PD | 60000 milliwatts |
