N-Channel 900V 6A (Ta) 60W (Tc) Through Hole TO-3P
Manufacturer: Renesas Electronics America
Win Source Part Number: 1004704-2SK1859-E
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-3P
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 6A (Ta)
Max Input Capacitance: 980pF @ 10V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 3 Ohm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
MOSFET N-CH 900V 6A TO3P
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 2SK1859-E-ND | 1004704-2SK1859-E | 2SK1859-E |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1859-E | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | |
| Package Type | TO-3; TO-3P-3, SC-65-3 | TO-3; SOT3; TO-3P | TO-220; TO-220-3 Full Pack |
| V(BR)DSS | 900 volts |
