Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1522E 2SK1522E

Description
Manufacturer: Renesas Electronics America Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1037618-2SK1522E Number of Elements: 1 Power Dissipation: 250 W Number of Pins: 3 Rise Time: 250 ns Fall Time: 250 ns Categories: Transistors - FETs, MOSFETs - RF Alternative Parts (Cross-Reference): IRFB59N10DPBF; FDP51N25; FDP2614; STW52NK25Z; FQA65N20; IRFB4227PBF2SK1522(E ); 2SK1522-E; Popularity: Low Fake Threat In the Open Market: 75 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Yes Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Turn-On Delay Time: 85 ns Continuous Drain Current (ID): 50 A Turn-Off Delay Time: 600 ns Gate to Source Voltage (Vgs): 30 V
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Description
Manufacturer: Renesas Electronics America Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1037618-2SK1522E Number of Elements: 1 Power Dissipation: 250 W Number of Pins: 3 Rise Time: 250 ns Fall Time: 250 ns Categories: Transistors - FETs, MOSFETs - RF Alternative Parts (Cross-Reference): IRFB59N10DPBF; FDP51N25; FDP2614; STW52NK25Z; FQA65N20; IRFB4227PBF2SK1522(E ); 2SK1522-E; Popularity: Low Fake Threat In the Open Market: 75 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Yes Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Turn-On Delay Time: 85 ns Continuous Drain Current (ID): 50 A Turn-Off Delay Time: 600 ns Gate to Source Voltage (Vgs): 30 V
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1522E - 1037618-2SK1522E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1522E
1037618-2SK1522E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1522E 1037618-2SK1522E
Manufacturer: Renesas Electronics America Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1037618-2SK1522E Number of Elements: 1 Power Dissipation: 250 W Number of Pins: 3 Rise Time: 250 ns Fall Time: 250 ns Categories: Transistors - FETs, MOSFETs - RF Alternative Parts (Cross-Reference): IRFB59N10DPBF; FDP51N25; FDP2614; STW52NK25Z; FQA65N20; IRFB4227PBF2SK1522(E ); 2SK1522-E; Popularity: Low Fake Threat In the Open Market: 75 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Yes Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Turn-On Delay Time: 85 ns Continuous Drain Current (ID): 50 A Turn-Off Delay Time: 600 ns Gate to Source Voltage (Vgs): 30 V

Manufacturer: Renesas Electronics America
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1037618-2SK1522E
Number of Elements: 1
Power Dissipation: 250 W
Number of Pins: 3
Rise Time: 250 ns
Fall Time: 250 ns
Categories: Transistors - FETs, MOSFETs - RF
Alternative Parts (Cross-Reference): IRFB59N10DPBF; FDP51N25; FDP2614; STW52NK25Z; FQA65N20; IRFB4227PBF2SK1522(E); 2SK1522-E;
Popularity: Low
Fake Threat In the Open Market: 75 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Lead Free: Yes
Mount: Through Hole
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Turn-On Delay Time: 85 ns
Continuous Drain Current (ID): 50 A
Turn-Off Delay Time: 600 ns
Gate to Source Voltage (Vgs): 30 V

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1037618-2SK1522E
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1522E
PD 250000 milliwatts
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