Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1518 2SK1518

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 075586-2SK1518 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 120W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-3P Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 20A (Ta) Max Input Capacitance: 3050pF @ 10V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 270 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1518 - 075586-2SK1518 - Win Source Electronics
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 075586-2SK1518 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 120W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-3P Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 20A (Ta) Max Input Capacitance: 3050pF @ 10V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 270 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1518 - 075586-2SK1518 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1518
075586-2SK1518
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1518 075586-2SK1518
Manufacturer: Renesas Electronics America Win Source Part Number: 075586-2SK1518 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 120W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-3P Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 20A (Ta) Max Input Capacitance: 3050pF @ 10V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 270 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited

Manufacturer: Renesas Electronics America
Win Source Part Number: 075586-2SK1518
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 120W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-3P
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 20A (Ta)
Max Input Capacitance: 3050pF @ 10V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 270 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 075586-2SK1518
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1518
Polarity N-Channel; N-Channel
V(BR)DSS 500 volts
PD 120000 milliwatts
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