Renesas Electronics Corporation FETs - Single - 2SK1342-E 2SK1342-E

Manufacturer: Renesas Electronics America
Win Source Part Number: 811645-2SK1342-E
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 900V
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 150°C
Manufacturer Package: TO-3P-3, SC-65-3
Power Dissipation (Maximum): 100W (Tc)
Popularity: Low
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 1.6Ohm at 4A, 10V
Input Capacitance (Ciss) (Maximum) at Vds: 1730pF at 10V
Current - Continuous Drain (Id) at 25°C: 8A
Maximum Vgs: ±30V

N-Channel 900V 8A (Ta) 100W (Tc) Through Hole TO-3P

MOSFET N-CH 900V 8A TO3P Product overview: 2SK1342-E from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2SK1342-E can be used for catalog matching and distributor lookup.