Manufacturer: Renesas Electronics America
Win Source Part Number: 811645-2SK1342-E
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 900V
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 150°C
Manufacturer Package: TO-3P-3, SC-65-3
Power Dissipation (Maximum): 100W (Tc)
Popularity: Low
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 1.6Ohm at 4A, 10V
Input Capacitance (Ciss) (Maximum) at Vds: 1730pF at 10V
Current - Continuous Drain (Id) at 25°C: 8A
Maximum Vgs: ±30V
N-Channel 900V 8A (Ta) 100W (Tc) Through Hole TO-3P
MOSFET N-CH 900V 8A TO3P
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 811645-2SK1342-E | 2SK1342-E-ND | 2SK1342-E | 2SK1342-E |
| Product Name | FETs - Single - 2SK1342-E | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel |
