Renesas Electronics Corporation Single FETs, MOSFETs 2SK1339-E

Description
N-Channel 900V 3A (Ta) 80W (Tc) Through Hole TO-3P
Request a Quote Datasheet
Description
N-Channel 900V 3A (Ta) 80W (Tc) Through Hole TO-3P
Request a Quote Datasheet

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Single FETs, MOSFETs - 2SK1339-E-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2SK1339-E-ND
Single FETs, MOSFETs 2SK1339-E-ND
N-Channel 900V 3A (Ta) 80W (Tc) Through Hole TO-3P

N-Channel 900V 3A (Ta) 80W (Tc) Through Hole TO-3P

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1339-E - 038929-2SK1339-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1339-E
038929-2SK1339-E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1339-E 038929-2SK1339-E
Manufacturer: Renesas Electronics America Win Source Part Number: 038929-2SK1339-E Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 80W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-3P Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 3A (Ta) Max Input Capacitance: 425pF @ 10V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 7 Ohm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 038929-2SK1339-E
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 80W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-3P
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 3A (Ta)
Max Input Capacitance: 425pF @ 10V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 7 Ohm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2SK1339-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2SK1339-E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2SK1339-E
MOSFET N-CH 900V 3A TO3P

MOSFET N-CH 900V 3A TO3P

Supplier's Site
Sheung Wan, Hong Kong
MOSFET POWER Transistor HV MOS

MOSFET POWER Transistor HV MOS

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2SK1339-E-ND 038929-2SK1339-E 2SK1339-E 2SK1339-E
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1339-E Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-3; TO-3P-3, SC-65-3 TO-3; SOT3; TO-3P TO-220; TO-220-3 Full Pack
V(BR)DSS 900 volts
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