Renesas Electronics Corporation JFETs (Junction Field Effect) - 2SK1070PIETR-E 2SK1070PIETR-E

Manufacturer: Renesas Electronics America
Win Source Part Number: 728951-2SK1070PIETR-E
Mounting Style: SMD
Transistor Polarity: N-Channel
Voltage - Breakdown (V(BR)GSS): 22V
Current Drain (Id) - Max: 50mA
Categories: Discrete Semiconductor Products
Supplier Device Package: 3-MPAK
Status: Obsolete
Temperature Range - Operating: 150°C
Manufacturer Package: TO-236-3, SC-59, SOT-23-3
Popularity: Low
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Maximum Power: 150mW
Input Capacitance (Ciss) (Maximum) at Vds: 9pF at 5V
Current - Drain (Idss) at Vds (Vgs=0): 12mA at 5V
Voltage - Cutoff (VGS off) at Id: 0V at 10μA

JFET N-CH 22V 50MA 3MPAK Product overview: 2SK1070PIETR-E from Renesas Electronics Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 22V, 50MA. Search-friendly keywords include transistor, BJT, switching, amplification, 22V, 50MA, Bipolar Transistor, JFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 288-2SK1070PIETR-E can be used for catalog matching and distributor lookup.

JFET N-Channel 22V 50mA 150mW Surface Mount 3-MPAK