Manufacturer: Renesas Electronics America
Win Source Part Number: 1004697-2SK1058-E
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 100W (Tc)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-3P
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 160V
Continuous Drain Current at 25°C: 7A (Ta)
Max Input Capacitance: 600pF @ 10V
Maximum Gate-Source Voltage: ±15V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited
N-Channel 160V 7A (Ta) 100W (Tc) Through Hole TO-3P
MOSFET N-CH 160V 7A TO3P
MOSFET N-CH 160V 7A TO3P
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1004697-2SK1058-E | 2SK1058-E-ND | 2SK1058-E | 2SK1058-E |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1058-E | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |
| V(BR)DSS | 160 volts | 160 volts | ||
| PD | 100000 milliwatts | 100000 milliwatts | ||
| TJ | 150 C (302 F) | 150 C (302 F) |
