Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1058-E 2SK1058-E

Manufacturer: Renesas Electronics America
Win Source Part Number: 1004697-2SK1058-E
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 100W (Tc)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-3P
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 160V
Continuous Drain Current at 25°C: 7A (Ta)
Max Input Capacitance: 600pF @ 10V
Maximum Gate-Source Voltage: ±15V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited

MOSFET N-CH 160V 7A TO3P Product overview: 2SK1058-E from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 160V, 7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 160V, 7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2SK1058-E can be used for catalog matching and distributor lookup.

N-Channel 160V 7A (Ta) 100W (Tc) Through Hole TO-3P