Renesas Electronics Corporation Single FETs, MOSFETs 2SK1058-E

Description
N-Channel 160V 7A (Ta) 100W (Tc) Through Hole TO-3P
  • Single FETs, MOSFETs - 2SK1058-E-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1058-E - 1004697-2SK1058-E - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2SK1058-E - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Single FETs, MOSFETs - 2SK1058-E - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
N-Channel 160V 7A (Ta) 100W (Tc) Through Hole TO-3P
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 2SK1058-E-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2SK1058-E-ND
Single FETs, MOSFETs 2SK1058-E-ND
N-Channel 160V 7A (Ta) 100W (Tc) Through Hole TO-3P

N-Channel 160V 7A (Ta) 100W (Tc) Through Hole TO-3P

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
160V 7A MOSFET Transistor
278-2SK1058-E
160V 7A MOSFET Transistor 278-2SK1058-E
MOSFET N-CH 160V 7A TO3P Product overview: 2SK1058-E from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 160V, 7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 160V, 7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2SK1058-E can be used for catalog matching and distributor lookup.

MOSFET N-CH 160V 7A TO3P Product overview: 2SK1058-E from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 160V, 7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 160V, 7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2SK1058-E can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1058-E - 1004697-2SK1058-E - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1058-E
1004697-2SK1058-E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1058-E 1004697-2SK1058-E
Manufacturer: Renesas Electronics America Win Source Part Number: 1004697-2SK1058-E Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 100W (Tc) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-3P Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 160V Continuous Drain Current at 25°C: 7A (Ta) Max Input Capacitance: 600pF @ 10V Maximum Gate-Source Voltage: ±15V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited

Manufacturer: Renesas Electronics America
Win Source Part Number: 1004697-2SK1058-E
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 100W (Tc)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-3P
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 160V
Continuous Drain Current at 25°C: 7A (Ta)
Max Input Capacitance: 600pF @ 10V
Maximum Gate-Source Voltage: ±15V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2SK1058-E - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2SK1058-E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2SK1058-E
MOSFET N-CH 160V 7A TO3P

MOSFET N-CH 160V 7A TO3P

Supplier's Site
Single FETs, MOSFETs - 2SK1058-E - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
2SK1058-E
Single FETs, MOSFETs 2SK1058-E
MOSFET N-CH 160V 7A TO3P

MOSFET N-CH 160V 7A TO3P

Supplier's Site Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2SK1058-E-ND 278-2SK1058-E 1004697-2SK1058-E 2SK1058-E 2SK1058-E
Product Name Single FETs, MOSFETs 160V 7A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1058-E Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-3; TO-3P-3, SC-65-3 Tube TO-3; SOT3; TO-3P TO-220; TO-220-3 Full Pack TO-3; TO-3P-3, SC-65-3
PD 100000 milliwatts 100000 milliwatts 100000 milliwatts
TJ 150 C (302 F) 150 C (302 F) 150 C (302 F)
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